2SK2512 NEC, 2SK2512 Datasheet
2SK2512
Available stocks
Related parts for 2SK2512
2SK2512 Summary of contents
Page 1
... DESCRIPTION The 2SK2512 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low On-Resistance (on (on)2 GS • Low 100 pF TYP. iss iss • Built-in G-S Protection Diode ABSOLUTE MAXIMUM RATINGS (T ...
Page 2
... Test Circuit 2 Gate Charge (on (on (off off 2SK2512 TEST CONDITIONS ...
Page 3
... TOTAL POWER DISSIPATION vs. CASE TEMPERATURE DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 200 V 100 100 Pulsed = 2SK2512 100 120 140 160 - Case Temperature - ˚C C Pulsed = Drain to Source Voltage - V 3 ...
Page 4
... DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE = 1000 V GS GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE Pulsed 100 – 2SK2512 = 62.5 ˚C/W = 3.57 ˚C/W Single Pulse 100 1 000 Pulsed Gate to Source Voltage - ...
Page 5
... 150 V SD SWITCHING CHARACTERISTICS 1 000 = 0 100 iss 10 oss 1.0 100 0.1 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 100 0 2SK2512 Pulsed 1.5 0.5 1.0 - Source to Drain Voltage - V t d(off d(on =10 G 1.0 10 100 I - Drain Current - A ...
Page 6
... Semiconductor device package manual. Guide to quality assurance for semiconductor devices. Semiconductor selection guide. Power MOS FET features and application switching power supply. Application circuits using Power MOS FET. Safe operating area of Power MOS FET. 6 2SK2512 Document No. TEI-1202 IEI-1209 IEI-1207 IEI-1213 MEI-1202 ...
Page 7
... [MEMO] 2SK2512 7 ...
Page 8
... The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. 8 2SK2512 M4 94.11 ...