2SK2515 NEC, 2SK2515 Datasheet
2SK2515
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2SK2515 Summary of contents
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... DESCRIPTION The 2SK2515 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super Low On-Resistance (on (on)2 GS • Low 400 pF TYP. iss iss • Built-in G-S Protection Diode ABSOLUTE MAXIMUM RATINGS (T ...
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... V 0. (S-D) t 105 265 nC rr Test Circuit 2 Switching Time D.U. PG Duty Cycle 2SK2515 TEST CONDITIONS ...
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... CASE TEMPERATURE 175 150 125 100 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 200 160 120 80 40 100 Pulsed = 2SK2515 100 120 140 160 T - Case Temperature - ˚C C Pulsed Drain to Source Voltage - V 3 ...
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... PW - Pulse Width - s DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 1000 GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE Pulsed 2.0 1.5 1.0 0.5 0 1000 – 2SK2515 = 41.7 ˚C/W th(ch- 0.83 ˚C/W th(ch-c) Single Pulse 100 1 000 Pulsed Gate to Source Voltage - ...
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... FORWARD VOLTAGE 100 0 150 V SD SWITCHING CHARACTERISTICS 1 000 = 0 100 C oss 10 1.0 100 0.1 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 100 0 2SK2515 Pulsed 1.5 0.5 1.0 - Source to Drain Voltage - V t d(off d(on 1.0 10 100 I - Drain Current - A ...
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... 100 Inductive Load - H 6 SINGLE AVALANCHE ENERGY DERATING FACTOR 160 140 120 100 Starting T - Starting Channel Temperature - ˚C ch 2SK2515 < 100 125 150 ...
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... Semiconductor device package manual. Guide to quality assurance for semiconductor devices. Semiconductor selection guide. Power MOS FET features and application switching power supply. Application circuits using Power MOS FET. Safe operating area of Power MOS FET. 2SK2515 Document No. TEI-1202 IEI-1209 IEI-1207 IEI-1213 MEI-1202 ...
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... The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. 8 2SK2515 M4 94.11 ...