2SK2516-01L Fuji Electric, 2SK2516-01L Datasheet
2SK2516-01L
Manufacturer Part Number
2SK2516-01L
Description
N-channel MOS-FET
Manufacturer
Fuji Electric
Datasheet
1.2SK2516-01L.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SK2516-01L
Manufacturer:
FUJITSU
Quantity:
12 500
- High Current
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- High Forward Transconductance
- Motor Control
- General Purpose Power Amplifier
- DC-DC converters
- Absolute Maximum Ratings (T
Item
Drain-Source-Voltage
Drain-Gate-Voltage (R
Continous Drain Current
Pulsed Drain Current
Gate-Source-Voltage
Max. Power Dissipation
Operating and Storage Temperature Range
- Electrical Characteristics (T
Item
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current
Gate Source Leakage Current
Drain Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On-Time t
Turn-Off-Time t
Avalanche capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
-
Item
Thermal Resistance
> Features
> Applications
> Maximum Ratings and Characteristics
Thermal Characteristics
on
off
(t
(t
on
on
=t
=t
d(off)
GS
d(on)
=20K )
+t
+t
f
r
)
)
C
=25°C),
C
=25°C),
FAP-III Series
2SK2516-01L,S
unless otherwise specified
unless otherwise specified
R
C
C
C
Q
R
R
V
V
V
P
V
V
V
T
T
Symbol
Symbol
g
Symbol
I
I
I
I
t
t
t
t
I
t
DS
DGR
D
D(puls)
GS
D
ch
stg
(BR)DSS
GS(th)
DSS
GSS
DS(on)
fs
iss
oss
rss
d(on)
r
d(off)
f
AV
SD
rr
rr
th(ch-a)
th(ch-c)
Test conditions
I
I
V
V
V
I
I
I
L=100µH
channel to air
channel to case
D
D
D
D
D
DS
GS
GS
=1mA
=1mA
=25A
=25A
=25A
I
F
-55 ~ +150
-dI
=30V
=0V
=±16V
=2xI
Rating
> Outline Drawing
F
/dt=100A/µs T
Test conditions
DR
I
F
=I
200
150
±16
V
R
V
V
30
30
50
80
V
DR
V
f=1MHz
I
GS
GS
GS
DS
CC
D
GS
=50A
=0V T
V
V
T
T
V
V
V
V
=10
=25V
=12V
=10V
=0V
V
ch
ch
GS
DS=
DS
GS
GS
DS
T
GS
=25°C
=125°C
ch
=0V
=12V
=0V
=4V
=10V
V
=0V
=25°C
GS
ch
Unit
ch
°C
°C
W
V
V
A
A
V
=25°C
=25°C
> Equivalent Circuit
N-channel MOS-FET
30V
Min.
Min.
1,0
30
50
17
13m
Typ.
Typ.
3500
1650
1,25
830
190
140
1,5
0,2
10
10
16
10
35
15
65
60
70
50A
Max.
Max.
5250
2480
1250
1,80
1,56
500
100
100
290
210
125
2,0
1,0
22
13
25
°C/W
°C/W
80W
Unit
Unit
m
m
mA
µC
µA
nA
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
A
V
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2SK2516-01L Summary of contents
Page 1
... Turn-Off-Time off on d(off) f Avalanche capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge - Thermal Characteristics Item Thermal Resistance 2SK2516-01L,S FAP-III Series > Outline Drawing =25°C), unless otherwise specified Symbol Rating DGR 200 D(puls) V ±16 ...
Page 2
... Typical Capacitances C=f =0V; f=1MHz [V] DS Power Dissipation P =f(Tc [°C] ch Collmer Semiconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com - 11/98 2SK2516-01L,S FAP-III Series Drain-Source On-State Resistance =25A; V =10V DS(on [°C] ch Typical Foward Transconductance g =f(I ); 80µs pulse test; V =25V ...