2SK2523-01 Fuji Electric, 2SK2523-01 Datasheet
2SK2523-01
Manufacturer Part Number
2SK2523-01
Description
N-channel MOS-FET
Manufacturer
Fuji Electric
Datasheet
1.2SK2523-01.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SK2523-01
Manufacturer:
FUJITSU
Quantity:
12 500
- High Speed Switching
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- High Voltage
- V
- Avalanche Proof
- Switching Regulators
- UPS
- DC-DC converters
- General Purpose Power Amplifier
- Absolute Maximum Ratings (T
Item
Drain-Source-Voltage
Drain-Gate-Voltage (R
Continous Drain Current
Pulsed Drain Current
Gate-Source-Voltage
Max. Power Dissipation
Operating and Storage Temperature Range
- Electrical Characteristics (T
Item
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current
Gate Source Leakage Current
Drain Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On-Time t
Turn-Off-Time t
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
-
Item
Thermal Resistance
> Features
> Applications
> Maximum Ratings and Characteristics
Thermal Characteristics
GS
= ± 30V Guarantee
on
off
(t
(t
on
on
=t
=t
d(off)
GS
d(on)
=20K )
+t
+t
f
r
)
)
C
=25°C),
C
=25°C),
FAP-II Series
2SK2523-01
unless otherwise specified
unless otherwise specified
R
C
C
C
Q
R
R
V
V
V
P
V
V
V
T
T
Symbol
Symbol
g
Symbol
I
I
I
I
t
t
t
t
I
t
DS
DGR
D
D(puls)
GS
D
ch
stg
(BR)DSS
GS(th)
DSS
GSS
DS(on)
fs
iss
oss
rss
d(on)
r
d(off)
f
AV
SD
rr
rr
th(ch-a)
th(ch-c)
I
I
V
V
V
I
I
L = 100µH
channel to air
channel to case
D
D
D
D
DS
GS
GS
=1mA
=1mA
=4,5A
=4,5A
I
F
-55 ~ +150
-dI
=450V
=0V
=±30V
=2xI
Rating
F
/dt=100A/µs T
Test conditions
Test conditions
DR
I
F
=I
450
450
150
±30
V
R
V
V
36
60
V
DR
V
f=1MHz
CC
GS
GS
9
GS
DS
I
GS
D
=300V
=10
=0V T
=9A
V
V
T
T
V
V
V
T
=25V
=10V
=0V
V
ch
ch
ch
GS
DS=
DS
GS
DS
GS
=25°C
=125°C
=25°C
=0V
=25V
=0V
=10V
V
=0V
GS
ch
Unit
ch
°C
°C
W
V
V
A
A
V
=25°C
=25°C
> Outline Drawing
> Equivalent Circuit
450V
N-channel MOS-FET
Min.
Min.
450
2,5
3,0
9,0
Typ.
Typ.
1150
0,87
130
550
3,0
6,6
1,1
3,9
10
50
20
50
60
35
Max.
Max.
1700
9A
1,65
75
500
100
200
2,08 °C/W
3,5
1,0
1,0
75
30
75
90
55
°C/W
60W
Unit
Unit
mA
µC
µA
nA
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
A
V
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2SK2523-01 Summary of contents
Page 1
... Turn-Off-Time off on d(off) f Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge - Thermal Characteristics Item Thermal Resistance 2SK2523-01 FAP-II Series =25°C), unless otherwise specified Symbol Rating V 450 DS V 450 DGR D(puls) V ± ...
Page 2
... D Typical Capacitances C=f =0V; f=1MHz [V] DS Power Dissipation P =f(Tc [°C] ch Collmer Semiconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com - 11/98 2SK2523-01 FAP-II Series Drain-Source On-State Resistance =4,5A; V =10V DS(on [°C] ch Typical Forward Transconductance g =f(I ); 80µs pulse test; V =25V; T =25° ...