2SK2545 Toshiba Semiconductor, 2SK2545 Datasheet

2SK2545

Manufacturer Part Number

2SK2545

Description

FET Silicon N Channel Mos Type(for High speed/ High Voltage Switching)

Manufacturer

Toshiba Semiconductor

Datasheets

1.2SK2545.pdf (6 pages)

2.2SK2545.pdf (6 pages)

3.2SK2545.pdf (5 pages)

4.2SK2545.pdf (5 pages)

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DC−DC Converter, Relay Drive and Motor Drive

Applications

Absolute Maximum Ratings

Thermal Characteristics

Low drain−source ON resistance

High forward transfer admittance

Low leakage current

Enhancement mode

Drain−source voltage

Drain−gate voltage (R

Gate−source voltage

Drain current

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

Avalanche current

Repetitive avalanche energy (Note 3)

Channel temperature

Storage temperature range

Note:

Thermal resistance, channel to case

Thermal resistance, channel to

ambient

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: V

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device.

Please handle with caution.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Characteristics

= 90 V, T

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)

Pulse (Note 1)

= 20 kΩ)

= 25°C (initial), L = 16.8 mH, R

(Note 1)

(Note 2)

: I

: V

DSS

= 2.0~4.0 V (V

= 100 μA (max) (V

(Ta = 25°C)

Symbol

th (ch−c)

th (ch−a)

: R

: |Y

DGR

GSS

DSS

stg

DS (ON)

2SK2545

| = 5.5 S (typ.)

= 0.9 Ω(typ.)

= 10 V, I

−55~150

Rating

3.125

Max

62.5

600

±30

345

150

= 600 V)

= 25 Ω, I

= 1 mA)

°C / W

Unit

°C

= 6 A

Weight: 1.9 g (typ.)

JEDEC

JEITA

TOSHIBA

2-10R1B

SC-67

2006-11-08

―

2SK2545

Unit: mm

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