2SK2641-01 Fuji Electric, 2SK2641-01 Datasheet
2SK2641-01
Manufacturer Part Number
2SK2641-01
Description
N-channel MOS-FET
Manufacturer
Fuji Electric
Datasheet
1.2SK2641-01.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SK2641-01
Manufacturer:
FUJITSU
Quantity:
12 500
- High Speed Switching
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- High Voltage
- V
- Repetitive Avalanche Rated
- Switching Regulators
- UPS
- DC-DC converters
- General Purpose Power Amplifier
- Absolute Maximum Ratings ( T
Item
Drain-Source-Voltage
Continous Drain Current
Pulsed Drain Current
Gate-Source-Voltage
Repetitive or Non-Repetitive (T
Avalanche Energy
Max. Power Dissipation
Operating and Storage Temperature Range
- Electrical Characteristics (T
Item
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current
Gate Source Leakage Current
Drain Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On-Time t
Turn-Off-Time t
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
-
Item
Thermal Resistance
> Features
> Applications
> Maximum Ratings and Characteristics
Thermal Characteristics
GS
= ± 30V Guarantee
on
off
Collmer Semiconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com - 11/98
(t
(t
on
on
=t
=t
d(off)
d(on)
+t
+t
f
r
)
)
ch
C
=25°C),
150°C)
C
FAP-IIS Series
=25°C),
2SK2641-01
unless otherwise specified
unless otherwise specified
Q
R
C
C
C
R
R
V
V
E
P
V
V
V
T
T
Symbol
Symbol
g
Symbol
I
I
I
I
I
t
t
t
t
I
t
DS
D
D(puls)
GS
AR
AS
D
ch
stg
(BR)DSS
GS(th)
DSS
GSS
DS(on)
fs
iss
oss
rss
d(on)
r
d(off)
f
AV
SD
rr
rr
th(ch-a)
th(ch-c)
I
I
V
V
V
I
I
L = 100µH
channel to air
channel to case
D
D
D
D
DS
GS
GS
=1mA
=1mA
=5A
=5A
I
F
-55 ~ +150
-dI
=2xI
=500V
=0V
=±30V
Rating
F
/dt=100A/µs T
Test conditions
Test conditions
DR
I
F
=I
500
±30
229
100
150
V
R
V
V
V
10
40
10
DR
V
f=1MHz
CC
I
GS
GS
DS
GS
D
GS
=10A
=300V
=10
=0V T
V
V
T
T
V
V
V
=25V
=10V
T
=0V
V
ch
ch
ch
GS
DS=
DS
GS
DS
GS
=25°C
=125°C
=25°C
=0V
=0V
=10V
=25V
V
=0V
GS
> Outline Drawing
ch
Unit
ch
mJ
°C
°C
W
V
A
A
V
A
=25°C
=25°C
> Equivalent Circuit
500V
N-channel MOS-FET
Min.
Min.
500
3,5
2,5
10
Typ.
Typ.
0,73
950
180
450
4,0
0,2
1,1
5,5
10
10
80
25
70
70
45
5
Max.
Max.
10A
1450
1,65
35
500
100
270
120
110
110
1,25 °C/W
4,5
1,0
0,9
40
70
100W
°C/W
Unit
Unit
mA
µC
µA
nA
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
A
V
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2SK2641-01 Summary of contents
Page 1
... Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge - Thermal Characteristics Item Thermal Resistance Collmer Semiconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com - 11/98 2SK2641-01 FAP-IIS Series =25°C), unless otherwise specified Symbol Rating V 500 ...
Page 2
... Typical Capacitances vs C=f =0V; f=1MHz [V] DS Avalanche Energy Derating E =f(starting =50V; I =10A Starting T [°C] ch 2SK2641-01 FAP-IIS Series Drain-Source On-State Resistance vs f =5A; V =10V DS(on [°C] ch Typical Forward Transconductance vs =f(I ); 80µs pulse test; V =25V; T =25° ...