2SK2644-01 Fuji Electric, 2SK2644-01 Datasheet
2SK2644-01
Manufacturer Part Number
2SK2644-01
Description
N-CHANNEL SILICON POWER MOSFET
Manufacturer
Fuji Electric
Datasheet
1.2SK2644-01.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SK2644-01
Manufacturer:
FUJITSU
Quantity:
12 500
www.datasheet4u.com
2SK2644-01
N-CHANNEL SILICON POWER MOSFET
www.fujielectric.co.jp/fdt/scd
Item
DC-DC converters
Thermal characteristics
Low on-resistance
Avalanche-proof
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source peak voltage
Repetitive or non-repetitive
Maximum avalanche energy
Maximum power dissipation
Operating and storage
temperature range
High speed switching
No secondary breakdown
High voltage
Switching regulators
Low driving power
V
UPS
General purpose power amplifier
Maximum ratings and characteristics
Item
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance
Applications
Absolute maximum ratings (Tc=25°C unless otherwise specified)
Electrical characteristics (T
Features
GS
=
±
35V Guarantee
c
=25°C unless otherwise specified)
V
I
I
V
I
E
P
T
T
D
D[puls]
AV
Symbol
AV
D
ch
stg
GS
DS
Symbol
R
R
Symbol
V
V
I
I
R
g
C
C
C
t
t
t
t
I
V
t
Q
GSS
d(on)
AV
DSS
r
d(off)
f
rr
th(ch-c)
th(ch-a)
fs
(BR)DSS
GS(th)
DS(on)
iss
oss
SD
rss
rr
-55 to +150
518.5
+150
Rating
500
±18
±72
±35
125
18
L=2.93mH
FUJI POWER MOSFET
V
I
Test Conditions
I
I
V
V
I
I
V
V
f=1MHz
V
I
I
-di/dt=100A/µs T
D
D
D
D
D
F
F
CC
DS
GS
DS
GS
GS
=18A
=2xI
=I
=1mA
=1mA
=9A
=9A
DR
=500V
=300V R
=10V
= ±35V V
=25V
=0V
DR
V
GS
V
mJ
°C
°C
Unit
A
A
A
V
V
W
V
V
GS
=0V
GS
V
V
DS
V
T
=0V T
GS
DS
G
DS
GS
=10V
=25V
ch
=10 Ω
=V
=0V
=0V
=25°C
=0V
ch
R
GS
=25°C
Remarks
ch
ch
= <
150 °C
=25°C
T
T
ch
ch
=25°C
=125°C
FAP-IIS SERIES
TO-3P
Outline Drawings
Equivalent circuit schematic
Gate(G)
Min.
Min.
500
18
3.5
5.5
1700
Typ.
Typ.
280
120
100
620
110
10
10
20
65
11
4.0
0.2
0.38
1.1
9.0
Source(S)
Drain(D)
2600
Max.
500
100
420
180
150
165
100
35.0
Max.
30
1.0
4.5
1.0
0.45
1.65
Units
Units
°C/W
°C/W
V
V
µA
mA
nA
Ω
S
pF
ns
A
V
ns
µC
1
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2SK2644-01 Summary of contents
Page 1
... N-CHANNEL SILICON POWER MOSFET Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage V = 35V Guarantee ± GS Avalanche-proof Applications Switching regulators UPS DC-DC converters General purpose power amplifier Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C unless otherwise specified) ...
Page 2
... FUJI POWER MOSFET www.datasheet4u.com Characteristics 2SK2644-01 2 ...
Page 3
... FUJI POWER MOSFET www.datasheet4u.com 2SK2644-01 3 ...
Page 4
... FUJI POWER MOSFET www.datasheet4u.com 2SK2644-01 4 ...