2SK2655

Manufacturer Part Number2SK2655
DescriptionN-channel MOS-FET
ManufacturerFuji Electric
2SK2655 datasheet
 


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> Features
- High Speed Switching
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- High Voltage
- V
= ± 30V Guarantee
GS
- Repetitive Avalanche Rated
> Applications
- Switching Regulators
- UPS
- DC-DC converters
- General Purpose Power Amplifier
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings ( T
C
Item
Drain-Source-Voltage
Continous Drain Current
Pulsed Drain Current
Gate-Source-Voltage
Repetitive or Non-Repetitive (T
150°C)
ch
Avalanche Energy
Max. Power Dissipation
Operating and Storage Temperature Range
- Electrical Characteristics (T
=25°C),
C
Item
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current
Gate Source Leakage Current
Drain Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On-Time t
(t
=t
+t
)
on
on
d(on)
r
Turn-Off-Time t
(t
=t
+t
)
off
on
d(off)
f
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
-
Thermal Characteristics
Item
Thermal Resistance
Collmer Semiconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com - 11/98
2SK2655-01R
FAP-IIS Series
=25°C),
unless otherwise specified
Symbol
Rating
V
900
DS
I
8
D
I
32
D(puls)
V
±30
GS
I
8
AR
E
141
AS
P
100
D
T
150
ch
T
-55 ~ +150
stg
unless otherwise specified
Symbol
Test conditions
V
I
=1mA
(BR)DSS
D
V
I
=1mA
GS(th)
D
I
V
=900V
DSS
DS
V
=0V
GS
V
=±30V
I
GSS
GS
R
I
=4A
DS(on)
D
g
I
=4A
fs
D
V
C
iss
DS
V
C
oss
C
f=1MHz
rss
t
V
d(on)
CC
I
t
r
V
t
d(off)
GS
t
R
f
GS
I
L = 100µH
AV
I
=2xI
V
V
SD
F
DR
GS
I
=I
t
rr
F
DR
Q
-dI
/dt=100A/µs T
rr
F
Symbol
Test conditions
R
channel to air
th(ch-a)
R
channel to case
th(ch-c)
N-channel MOS-FET
900V
> Outline Drawing
> Equivalent Circuit
Unit
V
A
A
V
A
mJ
W
°C
°C
Min.
Typ.
V
=0V
900
GS
V
V
3,5
4,0
DS=
GS
T
=25°C
10
ch
T
=125°C
0,2
ch
V
=0V
10
DS
V
=10V
1,48
GS
V
=25V
5
DS
=25V
1200
=0V
180
GS
90
=600V
30
=8A
120
D
=10V
95
60
=10
T
=25°C
8
ch
=0V T
=25°C
1,0
ch
V
=0V
1000
GS
=25°C
12
ch
Min.
Typ.
8A
100W
Max.
Unit
V
4,5
V
500
µA
1,0
mA
100
nA
2,0
S
pF
pF
pF
ns
ns
ns
ns
A
V
ns
µC
Max.
Unit
30
°C/W
1,25 °C/W

2SK2655 Summary of contents

  • Page 1

    ... Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge - Thermal Characteristics Item Thermal Resistance Collmer Semiconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com - 11/98 2SK2655-01R FAP-IIS Series =25°C), unless otherwise specified Symbol Rating V 900 ...

  • Page 2

    ... I [A] D Typical Capacitances vs C=f =0V; f=1MHz [V] DS Allowable Power Dissipation vs =f(Tc [°C] c 2SK2655-01R FAP-IIS Series Drain-Source On-State Resistance vs f =4A; V =10V DS(on [°C] ch Typical Forward Transconductance vs =f(I ); 80µs pulse test; V =25V; T =25°C fs ...