2SK2980 Hitachi Semiconductor, 2SK2980 Datasheet

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2SK2980

Manufacturer Part Number
2SK2980
Description
Silicon N Channel MOS FET High Speed Power Switching
Manufacturer
Hitachi Semiconductor
Datasheet

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Features
Outline
Low on-resistance
R
2.5V gate drive devices.
Small package (MPAK)
DS(on)
= 0. 2
typ. (V
GS
G
= 4 V, I
MPAK
Silicon N Channel MOS FET
High Speed Power Switching
D
= 500 mA)
D
S
2SK2980
3
2
1
1. Source
2. Gate
3. Drain
ADE-208-571B (Z)
3rd. Edition
Jun 1998

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2SK2980 Summary of contents

Page 1

... Silicon N Channel MOS FET High Speed Power Switching Features Low on-resistance typ DS(on) GS 2.5V gate drive devices. Small package (MPAK) Outline MPAK G 2SK2980 = 500 mA ADE-208-571B (Z) 3rd. Edition Jun 1998 1. Source 2. Gate 3. Drain ...

Page 2

... Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Note duty cycle 2. Value at when using alumina ceramic board (12 0.7 mm) 2 Symbol Ratings V 30 DSS ...

Page 3

... DS(on) — 0.3 0.5 DS(on) | 1.2 2.0 — fs — 155 — — 75 — — 35 — — 12 — — 30 — — 35 — — 30 — 2SK2980 Unit Test Conditions 100 +100 –100 5 8V 500 mA ...

Page 4

... Main Characteristics Power vs. Temperature Derating 1.6 Test condition : When using alumina ceramic board (12 0.7 mm) 1.2 0.8 0 100 Ambient Temperature Ta (°C) Typical Output Characteristics 1 2.5 V 0.8 0.6 0.4 0 Drain to Source Voltage V 4 100 0.3 0.1 0.03 0.01 150 200 0.1 1.0 Pulse Test 0 0.6 1.8 V 0 ...

Page 5

... Case Temperature Tc Static Drain to Source on State Resistance vs. Drain Current 2 1 0.5 0.2 0.1 0.05 10 0.1 0.2 (V) Drain Current Forward Transfer Admittance vs 0.5 0.2 0.1 0.05 160 0.01 0.02 0.05 0.1 (°C) Drain Current I 2SK2980 Pulse Test (A) D Drain Current Tc = –25 °C 25 °C 75 ° Pulse Test 0.2 0 ...

Page 6

... Typical Capacitance vs. Drain to Source Voltage 1000 500 200 Coss 100 Ciss 50 Crss Drain to Source Voltage V Switching Characteristics 200 100 d(off d(on µs, duty < 0.1 0.2 0.5 1 Drain Current MHz ...

Page 7

... Switching Time Test Circuit Vout Vin Monitor Monitor D.U. Vin DD 50W = Waveform 10% Vin Vout 10% 90% 90% td(off) td(on) tr 2SK2980 90% 10 ...

Page 8

... Package Dimensions + 0.10 0.4 – 0.05 0.95 0.95 1.9 + 0.3 2.8 – 0 0.10 0.16 – 0. 0.15 Hitachi Code MPAK SC–59A EIAJ JEDEC TO–236Mod. Unit: mm ...

Page 9

... This product is not designed to be radiation resistant one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. ...

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