2SK3095LS Sanyo Semicon Device, 2SK3095LS Datasheet

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2SK3095LS

Manufacturer Part Number
2SK3095LS
Description
N-Channel Silicon MOSFET General-Purpose Switching Device
Manufacturer
Sanyo Semicon Device
Datasheet
www.DataSheet.co.kr
Ordering number : EN8624
2SK3095LS
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
*1 V DD =50V, L=5mH, I AV =5A
*2 L 5mH, single pulse
Electrical Characteristics at Ta=25 C
Marking : K3095
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Enargy (Single Pulse) *1
Avalanche Current *2
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Low ON-resistance.
Low Qg.
Ultrahigh-Speed Switching Applications.
Avalanche resistance guarantee.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
V (BR)DSS
R DS (on)
V GS (off)
Symbol
Symbol
V DSS
V GSS
I DSS
I GSS
E AS
Tstg
I DP
Tch
I AV
P D
yfs
I D
SANYO Semiconductors
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
PW 10 s, duty cycle 1%
Tc=25 C
I D =1mA, V GS =0V
V DS =320V, V GS =0V
V GS = 30V, V DS =0V
V DS =10V, I D =1mA
V DS =10V, I D =2.8A
I D =2.8A, V GS =15V
2SK3095LS
Conditions
Conditions
DATA SHEET
N0806QB SY IM TC-00000313
min
400
3.0
1.4
Ratings
typ
Ratings
0.92
2.8
Continued on next page.
--55 to +150
max
71.4
400
150
2.0
100
1.0
4.0
1.2
30
20
25
5
5
No.8624-1/3
Unit
Unit
m
mJ
n
W
W
V
V
A
A
A
V
V
S
C
C
A
A
Datasheet pdf - http://www.DataSheet4U.net/

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2SK3095LS Summary of contents

Page 1

... SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 2SK3095LS SANYO Semiconductors N-Channel Silicon MOSFET General-Purpose Switching Device ...

Page 2

... Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Diode Forward Voltage Note : Be careful in handling the 2SK3095LS because it has no protection diode between gate and source. Package Dimensions unit : mm (typ) 7509-002 10.0 3.2 0.9 1.2 0. ...

Page 3

... Case Temperature Note on usage : Since the 2SK3095LS is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment ...

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