2SK3134 Hitachi Semiconductor, 2SK3134 Datasheet

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2SK3134

Manufacturer Part Number
2SK3134
Description
Silicon N Channel MOS FET High Speed Power Switching
Manufacturer
Hitachi Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SK3134L
Manufacturer:
HIT/RENESAS
Quantity:
12 500
Part Number:
2SK3134S
Manufacturer:
HIT/RENESAS
Quantity:
12 500
Features
Outline
Low on-resistance
R
Low drive current
4 V gate drive device can be driven from 5 V source
DS(on)
= 4 m
typ.
2SK3134(L), 2SK3134(S)
LDPAK
Silicon N Channel MOS FET
High Speed Power Switching
G
D
S
1
2
3
4
1
2
1. Gate
2. Drain
3. Source
4. Drain
3
4
ADE-208-721B (Z)
February 1999
3rd. Edition

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2SK3134 Summary of contents

Page 1

... Features Low on-resistance typ. DS(on) Low drive current 4 V gate drive device can be driven from 5 V source Outline LDPAK Silicon N Channel MOS FET High Speed Power Switching ADE-208-721B (Z) 3rd. Edition February 1999 Gate 2. Drain 3 ...

Page 2

... Absolute Maximum Ratings ( Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note duty cycle 2. Value Value at Tch = ...

Page 3

... V — 1.05 — — 80 — rr 2SK3134(L),2SK3134(S) Unit Test Conditions mA mA Note 1 m ...

Page 4

... Main Characteristics Power vs. Temperature Derating 160 120 100 Case Temperature Typical Output Characteristics 100 Drain to Source Voltage 4 1000 300 100 0.3 0.1 150 200 0.1 Tc (°C) 100 Pulse Test ...

Page 5

... V (V) GS Forward Transfer Admittance vs. 500 V DS 200 Pulse Test 100 10 0.5 150 200 0 2SK3134(L),2SK3134(S) vs. Drain Current Pulse Test 100 300 3 Drain Current I (A) D Drain Current = – 0 ...

Page 6

... Body–Drain Diode Reverse Recovery Time 1000 µs 500 25°C GS 200 100 0.1 0 Reverse Drain Current Dynamic Input Characteristics 160 Gate Charge 6 30000 10000 ...

Page 7

... Pulse Test 0 1.6 2 (V) SDF Monitor 2SK3134(L),2SK3134(S) Maximum Avalanche Energy vs. Channel Temperature Derating duty < 0 > 100 125 Channel Temperature Tch (°C) Avalanche Waveform V DSS • ...

Page 8

... Normalized Transient Thermal Impedance vs. Pulse Width 0.5 0.3 0.1 0.03 0.01 10 µ 100 µ Switching Time Test Circuit Vin Monitor Vin Pulse Width PW (S) Vout Monitor D.U. 25°C ch – c( (t) • ch – – 1.25 °C/ °C ...

Page 9

... Package Dimensions 10.2 ± 0.3 1.27 ± 0.2 1.2 ± 0.2 +0.2 0.86 –0.1 0.76 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 L type 4.44 ± 0.2 1.3 ± 0.2 10.2 ± 0.3 2.59 ± 0.2 1.2 ± 0.2 0.4 ± 0.1 2.54 ± 0.5 2SK3134(L),2SK3134(S) 4.44 ± 0.2 1.3 ± 0.2 +0.2 0.1 –0.1 2.59 ± 0.2 1.27 ± 0.2 0.4 ± 0.1 +0.2 0.86 –0.1 2.54 ± 0.5 S type LDPAK Hitachi Code EIAJ JEDEC Unit: mm — — 9 ...

Page 10

... This product is not designed to be radiation resistant one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. ...

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