2SK3135L Hitachi Semiconductor, 2SK3135L Datasheet
2SK3135L
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2SK3135L Summary of contents
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Features Low on-resistance typ. DS(on) Low drive current 4 V gate drive device can be driven from 5 V source Outline LDPAK Silicon N Channel MOS FET High Speed Power Switching ...
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Absolute Maximum Ratings ( Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note ...
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Electrical Characteristics ( Item Drain to source breakdown voltage V Gate to source leak current Zero gate voltege drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance ...
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Main Characteristics Power vs. Temperature Derating 200 150 100 100 Case Temperature Typical Output Characteristics 100 Drain to Source Voltage ...
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Drain to Source Saturation Voltage vs. Gate to Source Voltage 2.0 Pulse Test 1.6 1.2 0.8 0 Gate to Source Voltage Static Drain to Source on State ...
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Body–Drain Diode Reverse Recovery Time 1000 500 200 100 µ 0.1 0 Reverse Drain Current Dynamic Input Characteristics 100 ...
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Reverse Drain Current vs. Source to Drain Voltage 100 0.4 0.8 1.2 Source to Drain Voltage Avalanche Test Circuit V DS Monitor Rg Vin 250 200 ...
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Normalized Transient Thermal Impedance vs. Pulse Width 0.5 0.3 0.1 0.03 0.01 10 µ 100 µ Switching Time Test Circuit Vin Monitor Vin Pulse Width PW ...
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Package Dimensions 10.2 ± 0.3 1.27 ± 0.2 1.2 ± 0.2 +0.2 0.86 –0.1 0.76 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 L type 4.44 ± 0.2 1.3 ± 0.2 10.2 ± 0.3 2.59 ± 0.2 1.2 ± 0.2 ...
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... This product is not designed to be radiation resistant one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. ...