2SK3516-01SJ Fuji Electric, 2SK3516-01SJ Datasheet
2SK3516-01SJ
Related parts for 2SK3516-01SJ
2SK3516-01SJ Summary of contents
Page 1
... FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current ...
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... Characteristics Allowable Power Dissipation PD=f(Tc Typical Output Characteristics ID=f(VDS):80µs Pulse test,Tch=25° VDS [V] Typical Transconductance gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C ...
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... Drain-Source On-state Resistance RDS(on)=f(Tch):ID=4A,VGS=10V 2.0 1.5 1.0 max. 0.5 0.0 -50 - Tch [ C] Typical Gate Charge Characteristics VGS=f(Qg):ID=8A, Tch=25° Vcc= 90V 18 225V 16 360V [nC] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80µs Pulse test,Tch=25°C ...
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... Transient Thermal Impedance Zth(ch-c)=f(t):D Maximum Avalanche Current Pulsewidth I =f(t ):starting Tch=25°C. Vcc=45V Single Pulse Outline Drawings (mm) Type(L) FUJI POWER MOS FET See Note: 1. ...