2SK3541 Rohm, 2SK3541 Datasheet
2SK3541
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2SK3541 Summary of contents
Page 1
... DR ∗ 400 mA DRP ∗ 150 mW D °C Tch 150 −55~+150 °C Tstg 2SK3541 1.2 0.2 0 0.15Max. (1) Gate (2) Source (3) Drain Abbreviated symbol : Equivalent circuit Drain Gate ∗ Gate Protection Diode Source ∗A pr otection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use ...
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... V DS 100m Pulsed 50m 20m 10m 5m 2m Ta=125°C 1m 75°C 25°C 0.5m −25°C 0.2m 0. GATE-SOURCE VOLTAGE : V GS Fig.2 Typical transfer characteristics 2SK3541 Conditions =±20V =10µ =30V =3V, I =100µ =10mA, V =4V ...
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... iss oss C rss 2 1 0.5 0.1 0.2 0 DRAIN-SOURCE VOLTAGE : V (V) DS Fig.11 Typical capacitance vs. drain-source voltage 2SK3541 15 =2. =0. =0.05A 0.5 GATE-SOURCE VOLTAGE : V Fig.6 Static drain-source on-state resistance vs. gate-source voltage 200m =3V DS 100m 50m 20m Ta=125°C 10m 75° ...
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... Transistor ! ! ! ! Switching characteristics measurement circuit D.U. Fig.13 Switching time measurement circuit Pulse width (on Fig.14 Switching time waveforms 2SK3541 90% 50% 10% 90 (off) t off ...
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... Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any ...