2SK439 Hitachi Semiconductor, 2SK439 Datasheet
2SK439
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2SK439 Summary of contents
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... Silicon N-Channel MOS FET Application VHF amplifier Outline SPAK 2SK439 1. Gate Source 3. Drain ...
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... Drain to source breakdown voltage Gate cutoff current Drain current Gate to source cutoff voltage Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Power gain Noise figure Note: 1. The 2SK439 is grouped by I Grade DSS See characteristic curves of 2SK359. 2 Symbol V ...
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... Maximum Channel Dissipation Curve 300 200 100 0 50 100 Ambient Temperature 2SK439 150 3 ...
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Max 0.6 Max 0.45 0.1 1.27 1.27 2.54 2.2 Max 0.4 0.1 Hitachi Code SPAK JEDEC — EIAJ — Weight (reference value) 0.10 g Unit: mm ...
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... This product is not designed to be radiation resistant one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. ...