2SK973 Hitachi Semiconductor, 2SK973 Datasheet

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2SK973

Manufacturer Part Number
2SK973
Description
Silicon N-Channel MOS FET
Manufacturer
Hitachi Semiconductor
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SK973(L,S)
Manufacturer:
HIT/RENESAS
Quantity:
12 500
Part Number:
2SK973L
Manufacturer:
TI
Quantity:
30 000
Part Number:
2SK973STL
Manufacturer:
HITACHI
Quantity:
8 000
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2SK973
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device
• Suitable for motor drive, DC-DC converter,
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item
———————————————————————————————————————————
Drain to source voltage
———————————————————————————————————————————
Gate to source voltage
———————————————————————————————————————————
Drain current
———————————————————————————————————————————
Drain peak current
———————————————————————————————————————————
Body to drain diode reverse drain current
———————————————————————————————————————————
Channel dissipation
———————————————————————————————————————————
Channel temperature
———————————————————————————————————————————
Storage temperature
———————————————————————————————————————————
*
**
– Can be driven from 5 V source
power switch and solenoid drive
PW
Value at T
10 µs, duty cycle
C
= 25 °C
L
, 2SK973
1 %
Symbol
V
V
I
I
I
Pch**
Tch
Tstg
D
D(peak)
DR
DSS
GSS
S
*
DPAK-1
1
Ratings
60
±20
2
8
2
10
150
–55 to +150
2, 4
3
Unit
V
V
A
A
A
W
°C
°C
S type
1 2
1. Gate
2. Drain
3. Source
4. Drain
3
4
L type
1 2
3
4

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2SK973 Summary of contents

Page 1

... PW 10 µs, duty cycle ** Value ° 2SK973 S DPAK-1 1 Symbol V DSS V ...

Page 2

... L , 2SK973 S Table 2 Electrical Characteristics (Ta = 25°C) Item ——————————————————————————————————————————— ...

Page 3

... Drain to Source Voltage V 0.05 100 150 (°C) C Pulse Test 3 2 (V) DS 2SK973 L , 2SK973 S Maximum Safe Operation Area 1.0 0 25°C 0.1 0.1 0.3 1 100 Drain to Source Voltage V (V) DS Typical Transfer Characteristics 5 –25°C 75°C ...

Page 4

... L , 2SK973 S Drain to Source Saturation Voltage vs. Gate to Source Voltage 2.0 1.6 1.2 0.8 0 Gate to Source Voltage V Static Drain to Source on State Resistance vs. Temperature 1.0 Pulse Test 0.8 0.6 0.4 0 –40 0 Case Temperature T Pulse Test ( 1.0 0 ...

Page 5

... Gate Charge Qg (nc) 1000 (A) DR 100 2SK973 L , 2SK973 S Typical Capacitance vs. Drain to Source Voltage MHz 300 Ciss Coss 100 30 Crss Drain to Source Voltage V (V) DS Switching Characteristics ...

Page 6

... L , 2SK973 S Reverse Drain Current vs. Source to Drain Voltage 5 Pulse Test 0.4 0.8 Source to Drain Voltage 1.0 0.5 0.3 0.1 0.03 0. – 1.2 2.0 1.6 (V) SD Normalized Transient Thermal Impedance vs. Pulse Width 100 Pulse Width PW ( 25°C C ch–c(t) = (t) · ...

Page 7

... Switching Time Test Circuit Vin Monitor 50 Vin = 10 V Vout Monitor D.U.T Vin R L Vout . (on) DD 2SK973 L , 2SK973 S Wavewforms (off ...

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