R5009FNX ROHM Co. Ltd., R5009FNX Datasheet

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R5009FNX

Manufacturer Part Number
R5009FNX
Description
10v Drive Nch Mosfet
Manufacturer
ROHM Co. Ltd.
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
R5009FNX
Manufacturer:
ST
Quantity:
4 500
Part Number:
R5009FNXFU7
Manufacturer:
ITM
Quantity:
34 562
  V
*1 Pw10s, Duty cycle1%
*2 L 500μH, V
*3 Limited only by maximum temperature allowed.
Silicon N-channel MOSFET
1)Fast reverse recovery time (t
2) Low on-resistance.
3) Fast switching speed.
4) Gate-source voltage
5) Drive circuits can be simple.
6) Parallel use is easy.
Switching
Type
R5009FNX
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Avalanche Current
Avalanche Energy
Power dissipation (Tc=25℃)
Channel temperature
Range of storage temperature
Channel to Case
 Structure
Features
 Application
 Packaging specifications
 Absolute maximum ratings (Ta  25C)
 Thermal resistance
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
10V Drive Nch MOSFET
R5009FNX
GSS
garanteed to be ±30V .
DD
Package
Basic ordering unit (pieces)
=50V, Rg=25,starting Tch=25C
Parameter
Parameter
Continuous
Pulsed
Continuous
Pulsed
rr
)
Rth (ch-c)
Symbol
Symbol
Bulk
V
V
Tstg
500
Tch
E
I
I
I
P
DSS
GSS
I
I
DP
SP
AS
D
S
AS
D
*3
*3
*1
*1
*2
*2
55 to +150
Limits
Limits
500
30
36
150
4.5
5.4
2.5
9
36
50
9
1/5
C / W
Unit
Unit
mJ
C
C
W
V
V
A
A
A
A
A
 Dimensions (Unit : mm)
Inner circuit
(1) Gate
(2) Drain
(3) Souce
TO-220FM
(1)
2.54
1.3
(1)
*
10.0
(2) (3)
1 Body Diode
(2)
Data Sheet
1.2
2.54
0.8
φ 3.2
∗1
2011.07 - Rev.A
0.75
4.5
(3)
2.8
2.6

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R5009FNX Summary of contents

Page 1

... GSS 5) Drive circuits can be simple. 6) Parallel use is easy.  Application Switching  Packaging specifications Package Type Basic ordering unit (pieces) R5009FNX  Absolute maximum ratings (Ta  25C) Parameter Drain-source voltage Gate-source voltage Continuous Drain current Pulsed Continuous Source current ...

Page 2

... R5009FNX  Electrical characteristics (Ta = 25C) Parameter Symbol Gate-source leakage I Drain-source breakdown voltage V (BR)DSS Zero gate voltage drain current I Gate threshold voltage V GS (th) Static drain-source on-state R DS (on) resistance Forward transfer admittance l Y Input capacitance C Output capacitance C Reverse transfer capacitance C Turn-on delay time ...

Page 3

... R5009FNX Electrical characteristics curves 15 T =25° 8. 10V Pulsed DRAIN-SOURCE VOLTAGE : V [V] DS Fig.1 Typical Output Characteristics( Ⅰ) 100 V = 10V DS I =1mA 0.1 - 100 CHANNEL TEMPERATURE: Tch (℃) Fig.4 Gate Threshold Voltage vs ...

Page 4

... R5009FNX 1000 T =25°C a Pulsed 100 10 0 SOURCE-CURRENT : I [V] S Fig.10 Reverse Recovery Time vs. Source Current 10000 C iss 1000 100 C rss T =25° f=1MHz oss V = 0.01 0 100 DRAIN-SOURCE VOLTAGE : V [V] DS Fig.13 Typical Capacitance vs. Drain-Source Voltage 10 1 0.1 0.01 0.001 0.0001 0.001 ...

Page 5

... R5009FNX  Measurement circuits D.U. Fig.1-1 Switching Time Measurement Circuit D.U.T. I G(Const Fig.2-1 Gate Charge Measurement Circuit D.U. Fig.3-1 Avalanche Measurement Circuit www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. ...

Page 6

ROHM Co., Ltd. All rights reserved Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ Notice ...

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