SI4804DY Vishay Siliconix, SI4804DY Datasheet
SI4804DY
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SI4804DY Summary of contents
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... Top View Ordering Information: Si4804DY Si4804DY-T1 (with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current Continuous Source Current (Diode Conduction) ...
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... Si4804DY Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain-Source On-State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic ...
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... V − Source-to-Drain Voltage (V) SD Document Number: 71088 S-31989—Rev. D, 13-Oct-03 1000 25_C J 0.8 1.0 1.2 Si4804DY Vishay Siliconix Capacitance 800 C iss 600 400 C oss C 200 rss − Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1 ...
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... Si4804DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0 250 mA D −0.0 −0.2 −0.4 −0.6 −0.8 −50 − − Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − Normalized Thermal Transient Impedance, Junction-to-Foot ...