SI4848DY Vishay Siliconix, SI4848DY Datasheet

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SI4848DY

Manufacturer Part Number
SI4848DY
Description
N-Channel 150-V (D-S) MOSFET
Manufacturer
Vishay Siliconix
Datasheet

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Notes
a.
Document Number: 71356
S-03950—Rev. B, 26-May-03
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Avalanch Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
i
DS
Ordering Information: Si4848DY
150
150
(V)
J
ti
G
S
S
S
t A bi
1
2
3
4
J
J
a
a
Si4848DY-T1 (with Tape and Reel)
0.095 @ V
0.085 @ V
= 150_C)
= 150_C)
t
a
a
Top View
Parameter
Parameter
SO-8
r
DS(on)
a
a
GS
GS
N-Channel 150-V (D-S) MOSFET
(W)
= 6.0 V
= 10 V
8
7
6
5
a
D
D
D
D
A
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
L = 0.1 mH
T
T
T
T
t v 10 sec
A
A
A
A
I
= 25_C
= 70_C
= 25_C
= 70_C
D
3.7
3.5
(A)
G
N-Channel MOSFET
Symbol
Symbol
T
R
R
R
V
V
J
I
I
P
P
, T
DM
I
I
AS
I
thJA
thJF
DS
GS
D
D
S
D
D
stg
D
S
10 secs
Typical
3.7
3.0
2.5
3.0
1.9
35
68
18
-55 to 150
"20
150
25
10
Steady State
Maximum
Vishay Siliconix
2.7
2.1
1.3
1.5
1.0
42
82
23
Si4848DY
www.vishay.com
Unit
Unit
_C/W
C/W
_C
W
W
V
V
A
1

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SI4848DY Summary of contents

Page 1

... SO Top View Ordering Information: Si4848DY Si4848DY-T1 (with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current Avalanch Current Continuous Source Current (Diode Conduction) ...

Page 2

... Si4848DY Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain Source On State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage ...

Page 3

... 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Document Number: 71356 S-03950—Rev. B, 26-May-03 1200 25_C J 0.8 1.0 1.2 Si4848DY Vishay Siliconix Capacitance C iss 900 600 300 C rss C oss Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 3 3 ...

Page 4

... Si4848DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 1.0 0.5 = 250 0.0 -0.5 -1.0 -1.5 -50 - Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 100 125 ...

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