SI4914BDY Vishay Siliconix, SI4914BDY Datasheet

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SI4914BDY

Manufacturer Part Number
SI4914BDY
Description
Dual N-Channel 30-V (D-S) MOSFET
Manufacturer
Vishay Siliconix
Datasheet

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SI4914BDY-T1-E3
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SI4914BDY-T1-GE3
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SI4914BDY-T1-GE3
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www.DataSheet.co.kr
Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Package limited.
Document Number: 69654
S09-2109-Rev. E, 12-Oct-09
Ordering Information: Si4914BDY-T1-E3 (Lead (Pb)-free)
Channel-1
Channel-2
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current (10 µs Pulse Width)
Continuous Source-Drain Diode Current
PulseD Source-Drain Current
Single-Pulse Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
PRODUCT SUMMARY
SCHOTTKY PRODUCT SUMMARY
V
DS
30
(V)
G
D
D
S
1
1
2
2
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
C
V
1
2
3
4
= 25 °C.
DS
30
(V)
Si4914BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
Diode Forward Voltage
T op V i e w
SO-8
0.027 at V
0.025 at V
0.021 at V
0.020 at V
0.50 V at 1.0 A
R
V
J
a, b
DS(on)
SD
= 150 °C)
(V)
8
7
6
5
GS
GS
GS
GS
(Ω)
= 4.5 V
= 4.5 V
= 10 V
= 10 V
G
S
S
S
1
1
1
1
a, b
/D
/D
/D
2
2
2
I
D
8.4
7.4
8
8
(A)
d
d
a
A
= 25 °C, unless otherwise noted
I
Q
F
2.0
g
L = 0.1 mH
T
T
T
T
T
T
T
T
T
T
(A)
6.7
7.0
(Typ.)
C
C
A
A
C
A
C
C
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• LITTLE FOOT
• 100 % R
• Compliant to RoHS Directive 2002/95/EC
• Notebook PC
Symbol
T
Definition
- System Power dc-to-dc
J
V
V
E
I
I
I
P
, T
DM
I
I
SM
AS
GS
DS
AS
D
S
D
stg
N-Channel 1
N-Channel 2
g
MOSFET
MOSFET
G
G
and UIS Tested
1
2
Channel-1
®
6.7
5.3
1.0
1.7
1.1
8.4
6.7
2.4
2.7
1.7
Plus Integrated Schottky
40
40
b, c
b, c
b, c
b, c
b, c
- 55 to 150
D
S
1
2
11.2
30
20
15
Channel-2
7.4
5.7
1.1
2.0
1.2
Schottky Diode
7.4
2.8
3.1
2.0
40
40
8
Vishay Siliconix
d
b, c
b, c
b, c
b, c
b, c
S
Si4914BDY
1
/D
2
www.vishay.com
Unit
mJ
°C
W
V
A
1
Datasheet pdf - http://www.DataSheet4U.net/

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SI4914BDY Summary of contents

Page 1

... Ordering Information: Si4914BDY-T1-E3 (Lead (Pb)-free) Si4914BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width) Continuous Source-Drain Diode Current ...

Page 2

... Si4914BDY Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter a Maximum Junction-to-Ambient Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 120 °C/W for Channel 1 and 115 °C/W for Channel 2. MOSFET SPECIFICATIONS T Parameter Static Drain-Source Breakdown Voltage ...

Page 3

... A, dI/dt = 100 A/µ 2.2 A, dI/dt = 100 A/µ 2.2 A, dI/dt = 100 A/µ 2.2 A, dI/dt = 100 A/µ 2.2 A, dI/dt = 100 A/µ 2.2 A, dI/dt = 100 A/µ 2.2 A, dI/dt = 100 A/µ 2.2 A, dI/dt = 100 A/µs F Si4914BDY Vishay Siliconix a Min. Typ. Max. Unit Ch-2 8 ...

Page 4

... Si4914BDY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.5 1 Drain-to-Source Voltage (V) DS Output Characteristics 0.05 0.04 0. 0.02 0. Drain Current (A) D On-Resistance vs. Drain Current 3.2 6 Total Gate Charge (nC) ...

Page 5

... Limited DS(on 0 °C A Single Pulse 0.01 0 Drain-to-Source Voltage ( > minimum V at which Safe Operating Area Si4914BDY Vishay Siliconix 0.10 0.08 0.06 0. 125 ° ° Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 100 ...

Page 6

... Si4914BDY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 3.5 2.8 2.1 1.4 0 Case Temperature (°C) C Power, Junction-to-Foot * The power dissipation P is based dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...

Page 7

... Single Pulse - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4914BDY Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 120 ° ...

Page 8

... Si4914BDY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.5 1 Drain-to-Source Voltage (V) DS Output Characteristics 0.040 0.034 0.028 V GS 0.022 0.016 0.010 Drain Current (A) D On-Resistance vs. Drain Current ...

Page 9

... Limited DS(on 0 °C A Single Pulse 0.01 0 Drain-to-Source Voltage ( > minimum V at which Safe Operating Area Si4914BDY Vishay Siliconix 0.10 0.08 0.06 0. 125 ° ° Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 100 ...

Page 10

... Si4914BDY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 4.0 3.2 2.4 1.6 0 Case Temperature (°C) C Power, Junction-to-Foot * The power dissipation P is based dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...

Page 11

... S09-2109-Rev. E, 12-Oct- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4914BDY Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 115 ° ...

Page 12

... B 0.35 0.51 C 0.19 0.25 D 4.80 5.00 E 3.80 4.00 e 1.27 BSC H 5.80 6.20 h 0.25 0.50 L 0.50 0.93 q 0° 8° S 0.44 0.64 Package Information Vishay Siliconix All Leads 0.101 mm q 0.004" INCHES Min Max 0.053 0.069 0.004 0.008 0.014 0.020 0.0075 0.010 0.189 0.196 0.150 0.157 0.050 BSC 0.228 0.244 0.010 0.020 0.020 0.037 0° ...

Page 13

... See Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs, (http://www.vishay.com/ppg?72286), for the basis of the pad design for a LITTLE FOOT SO-8 power MOSFET. In converting this recommended minimum pad ...

Page 14

... Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 Return to Index Return to Index www.vishay.com 22 0.172 (4.369) 0.028 (0.711) 0.022 0.050 (0.559) (1.270) Recommended Minimum Pads Dimensions in Inches/(mm) Document Number: 72606 Revision: 21-Jan-08 Datasheet pdf - http://www.DataSheet4U.net/ ...

Page 15

... Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’ ...

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