SI4914DY Vishay Siliconix, SI4914DY Datasheet

no-image

SI4914DY

Manufacturer Part Number
SI4914DY
Description
Dual N-Channel 30-V (D-S) MOSFET
Manufacturer
Vishay Siliconix
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4914DY
Manufacturer:
GMT
Quantity:
2 498
Part Number:
SI4914DY
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI4914DY-T1-E3
Manufacturer:
VISHAY
Quantity:
12 955
Part Number:
SI4914DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI4914DY-T1-E3
Manufacturer:
VISHAY
Quantity:
685
www.DataSheet4U.com
Notes:
a. Surface Mounted on 1" x 1" FR4 Board.
Document Number: 72938
S-61959-Rev. C, 09-Oct-06
Channel-1
Channel-2
PRODUCT SUMMARY
SCHOTTKY PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Single Pulse Avalanche Current
Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
DS
30
Ordering Information: Si4914DY-T1-E3 (Lead (Pb)-free)
(V)
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
D
D
G
S
1
1
2
2
V
DS
30
1
2
3
4
Diode Forward Voltage
(V)
0.40 V at 1.0 A
Top View
SO-8
V
SD
J
a
0.032 at V
0.027 at V
0.023 at V
0.020 at V
= 150 °C)
a
(V)
r
DS(on)
8
7
6
5
GS
GS
GS
GS
a
(Ω)
= 4.5 V
= 4.5 V
G
S
S
S
= 10 V
= 10 V
1
1
1
1
/D
/D
/D
L = 0.1 mH
T
T
T
T
Steady State
Steady State
2
2
2
A
A
A
A
t ≤ 10 sec
a
= 25 °C
= 70 °C
= 25 °C
= 70 °C
A
I
F
2.0
= 25 °C, unless otherwise noted
(A)
I
D
7.0
5.6
7.4
6.4
New Product
(A)
Symbol
Symbol
T
R
J
R
V
V
E
I
I
P
, T
DM
I
I
AS
thJA
thJF
GS
DS
AS
D
S
D
stg
FEATURES
APPLICATIONS
• LITTLE FOOT
• 100 % R
• Logic DC/DC
10 sec
N-Channel 1
N-Channel 2
- Notebook PC
7.0
5.6
1.7
1.9
1.2
MOSFET
MOSFET
G
G
Typ
52
90
30
1
2
Channel-1
Channel-1
8.45
g
40
13
Steady State
Tested
D
0.71
S
5.5
4.3
1.0
1.1
1
Max
2
112
®
65
38
Plus Integrated Schottky
- 55 to 150
30
20
Schottky Diode
10 sec
7.4
1.8
2.0
1.3
S
6
Typ
1
47
85
28
/D
2
Channel-2
Channel-2
Vishay Siliconix
Steady State
40
15
11
Si4914DY
0.95
1.16
0.74
5.7
4.5
Max
107
60
35
www.vishay.com
RoHS
COMPLIANT
°C/W
Unit
Unit
mJ
°C
W
V
A
1

Related parts for SI4914DY

SI4914DY Summary of contents

Page 1

... Top View Ordering Information: Si4914DY-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T Pulsed Drain Current Continuous Source Current (Diode Conduction) Single Pulse Avalanche Current Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si4914DY Vishay Siliconix MOSFET SPECIFICATIONS T Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance b Diode Forward Voltage a Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time ...

Page 3

... Q – Total Gate Charge (nC) g Gate Charge Document Number: 72938 S-61959-Rev. C, 09-Oct- 4.5 6.0 7.5 Si4914DY Vishay Siliconix 125 ° ° °C 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 V – Gate-to-Source Voltage (V) GS Transfer Characteristics 1000 C iss 800 ...

Page 4

... Si4914DY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless noted 150 ° 0.0 0.2 0.4 0.6 V – Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.4 0.2 0.0 - 0.2 - 0.4 - 0 – Temperature (°C) J Threshold Voltage www.vishay.com °C J 0.8 1.0 1.2 1 250 µ 100 125 150 ...

Page 5

... Document Number: 72938 S-61959-Rev. C, 09-Oct- Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot Si4914DY Vishay Siliconix Notes Duty Cycle Per Unit Base = ° ...

Page 6

... Si4914DY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless noted thru – Drain-to-Source Voltage (V) DS Output Characteristics 0.040 0.035 0.030 0.025 0.020 0.015 0.010 0.005 0.000 – Drain Current (A) D On-Resistance vs ...

Page 7

... Limited DS(on D(on) Limited °C C 0.1 Single Pulse BV Limited DSS 0.01 0 – Drain-to-Source Voltage (V) DS Safe Operating Area Si4914DY Vishay Siliconix 0.10 0.08 0. 0.02 0. – Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 200 160 120 0.001 ...

Page 8

... Si4914DY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech- nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www ...

Page 9

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description ...

Related keywords