SI4943DY Vishay Siliconix, SI4943DY Datasheet

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SI4943DY

Manufacturer Part Number
SI4943DY
Description
Dual P-Channel 20-V (D-S) MOSFET
Manufacturer
Vishay Siliconix
Datasheet

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Notes
a.
Document Number: 71682
S-21192—Rev. B, 29-Jul-02
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
Surface Mounted on 1 ” x 1” FR4 Board.
i
DS
- 20
- 20
(V)
J
ti
t A bi
G
G
S
S
1
1
2
2
0.030 @ V
0.019 @ V
J
J
a
a
1
2
3
4
= 150_C)
= 150_C)
t
a
a
r
Parameter
Parameter
DS(on)
Top View
Dual P-Channel 20-V (D-S) MOSFET
SO-8
GS
GS
a
a
= - 4.5 V
= - 10 V
(W)
a
8
7
6
5
D
D
D
D
1
1
2
2
A
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
t v 10 sec
T
T
T
T
I
New Product
A
A
A
A
D
- 8.4
- 6.7
= 25_C
= 70_C
= 25_C
= 70_C
(A)
G
1
Symbol
Symbol
P-Channel MOSFET
T
R
R
R
J
V
V
I
P
P
, T
DM
thJA
thJF
I
I
I
GS
DS
D
D
S
D
D
stg
D
1
FEATURES
D TrenchFETr Power MOSFET
APPLICATIONS
D Load Switching
D Battery Switching
S
1
D
- Computer
- Game Systems
- 2-Cell Li-lon
1
10 secs
Typical
- 8.4
- 6.7
- 1.7
2.0
1.3
45
85
26
- 55 to 150
"20
- 20
- 30
G
2
Steady State
P-Channel MOSFET
Maximum
Vishay Siliconix
- 6.3
- 5.1
- 0.9
62.5
1.1
0.7
110
35
D
2
S
2
D
Si4943DY
2
www.vishay.com
Unit
Unit
_C/W
_C
C/W
W
W
V
V
A
A
1

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SI4943DY Summary of contents

Page 1

... 70_C stg Symbol sec R R thJA Steady State Steady State R thJF Si4943DY Vishay Siliconix FEATURES D TrenchFETr Power MOSFET APPLICATIONS D Load Switching - Computer - Game Systems D Battery Switching - 2-Cell Li-lon ...

Page 2

... Si4943DY Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain Source On State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage ...

Page 3

... V - Source-to-Drain Voltage (V) SD Document Number: 71682 S-21192—Rev. B, 29-Jul-02 New Product = 4 25_C J 1.0 1.2 1.4 Si4943DY Vishay Siliconix Capacitance 3000 2500 C iss 2000 1500 1000 C oss 500 C rss Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1 ...

Page 4

... Si4943DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.8 0.6 = 250 0.4 0.2 0.0 - 0 Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse ...

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