BU2506DX Philips Semiconductors, BU2506DX Datasheet

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BU2506DX

Manufacturer Part Number
BU2506DX
Description
Silicon Diffused Power Transistor
Manufacturer
Philips Semiconductors
Datasheet
Philips Semiconductors
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated
damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television
receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low
worst case dissipation.
QUICK REFERENCE DATA
PINNING - SOT399
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
1 Turn-off current.
September 1997
Silicon Diffused Power Transistor
SYMBOL
V
V
I
I
P
V
I
V
t
SYMBOL
V
V
I
I
I
I
-I
-I
P
T
T
C
CM
Csat
f
case isolated
C
CM
B
BM
PIN
B(AV)
BM
stg
j
CESM
CEO
tot
CEsat
F
CESM
CEO
tot
1
2
3
base
collector
emitter
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Fall time
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value
Total power dissipation
Storage temperature
Junction temperature
DESCRIPTION
PIN CONFIGURATION
1
case
CONDITIONS
V
T
I
I
I
CONDITIONS
V
average over any 20 ms period
T
1 2 3
C
F
Csat
BE
hs
BE
hs
1
= 3.0 A
= 3.0 A; I
= 0 V
= 3.0 A; I
= 0 V
25 ˚C
25 ˚C
B
= 0.79 A
B(end)
= 0.67 A
SYMBOL
b
TYP.
MIN.
0.25
Product specification
3.0
1.6
-55
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Rbe
BU2506DX
MAX.
MAX.
1500
e
1500
c
700
700
100
150
150
2.0
0.5
45
45
5
8
5
5
8
3
5
4
-
Rev 2.400
UNIT
UNIT
mA
W
W
˚C
˚C
V
V
A
A
V
A
V
V
V
A
A
A
A
A
s

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BU2506DX Summary of contents

Page 1

... ˚ 0.67 A Csat B(end) PIN CONFIGURATION case CONDITIONS average over any 20 ms period ˚ Product specification BU2506DX TYP. MAX. UNIT - 1500 V - 700 3 1.6 2.0 V 0.25 0.5 s SYMBOL ...

Page 2

... 3 CONDITIONS MHz 3 1.35 mH; Csat 9 B(end (-dI / Product specification BU2506DX TYP. MAX. UNIT - 3.7 K/W - 2.8 K K/W MIN. TYP. MAX. UNIT - 2500 MIN. TYP. MAX. UNIT - - 1.0 mA ...

Page 3

... IBM Fig.5. Typical base-emitter saturation voltage. + 150 v nominal 1 adjust for ICsat 0.9 0.8 0.7 Lc 0.6 0.5 0.4 0.3 Cfb 0.2 0.1 0 0.1 Fig.6. Typical collector-emitter saturation voltage. 3 Product specification BU2506DX 125 0 parameter V CE VBESAT / 125 C IC/ sat = parameter I ...

Page 4

... 125 Fig.11. Normalised power dissipation 85˚ Product specification BU2506DX 2. parameter 85˚ Normalised Power Derating with heatsink compound 100 120 ...

Page 5

... Fig.13. Forward bias safe operating area Region of permissible DC operation Extension for repetitive pulse operation. NB: Mounted without heatsink compound and 30 the envelope. 5 Product specification BU2506DX = 0.01 ICM max IC max II Ptot max I 10 100 1000 VCE / V 5 newton force on the centre of ...

Page 6

... Net Mass: 5.88 g 4.5 27 max 22.5 max 18.1 min Fig.14. SOT399; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". September 1997 16.0 max 0.7 10.0 25.1 25.7 5.1 2.2 max 4.5 1.1 0.4 M 5.45 5.45 6 Product specification BU2506DX 5.8 max 3.0 3 0.95 max 3.3 Rev 2.400 ...

Page 7

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1997 7 Product specification BU2506DX Rev 2.400 ...

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