BU2520AX Philips Semiconductors, BU2520AX Datasheet - Page 2

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BU2520AX

Manufacturer Part Number
BU2520AX
Description
Silicon Diffused Power Transistor
Manufacturer
Philips Semiconductors
Datasheet
Philips Semiconductors
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
STATIC CHARACTERISTICS
T
DYNAMIC CHARACTERISTICS
T
2 Measured with half sine-wave voltage (curve tracer).
September 1997
Silicon Diffused Power Transistor
hs
SYMBOL
V
C
hs
SYMBOL
I
I
I
BV
V
V
V
h
h
hs
SYMBOL
C
t
t
t
t
CES
CES
EBO
s
f
s
f
FE
FE
isol
CEOsust
CEsat
BEsat
isol
c
= 25 ˚C unless otherwise specified
= 25 ˚C unless otherwise specified
= 25 ˚C unless otherwise specified
EBO
PARAMETER
Repetitive peak voltage from all
three terminals to external
heatsink
Capacitance from T2 to external f = 1 MHz
heatsink
PARAMETER
Collector cut-off current
Emitter cut-off current
Emitter-base breakdown voltage
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
PARAMETER
Collector capacitance
Switching times (32 kHz line
deflection circuit)
Turn-off storage time
Turn-off fall time
Switching times (16 kHz line
deflection circuit)
Turn-off storage time
Turn-off fall time
2
CONDITIONS
R.H.
CONDITIONS
V
V
T
V
I
I
L = 25 mH
I
I
I
I
CONDITIONS
I
I
I
-V
I
I
(-dI
B
B
C
C
C
C
E
Csat
B(end)
Csat
B(end)
j
BE
BE
EB
= 1 mA
= 0 A; I
= 6.0 A; I
= 6.0 A; I
= 100 mA; V
= 6 A; V
= 0 A; V
BB
= 125 ˚C
65 % ; clean and dustfree
B
= 0 V; V
= 0 V; V
= 7.5 V; I
= 6.0 A; L
= 6.0 A; L
/dt = 0.8 A / s)
= 4 V; (-dI
= 0.85 A; L
= 1.0 A; L
2
C
CE
CB
= 100 mA;
B
B
CE
CE
= 10 V; f = 1 MHz
= 1.2 A
= 1.2 A
= 5 V
C
C
C
= V
= V
= 0 A
CE
B
B
= 330 H; C
= 650 H; C
/dt = 1.2 A / s)
B
= 5.3 H; -V
= 5 V
= 3.45 H;
CESMmax
CESMmax
;
fb
fb
BB
= 9 nF;
= 19 nF;
= 4 V;
MIN.
MIN.
800
7.5
5
-
-
-
-
-
-
-
-
TYP.
TYP.
TYP.
13.5
0.35
115
3.0
0.2
4.5
22
13
7
-
-
-
-
-
-
Product specification
BU2520AX
MAX.
MAX.
MAX.
2500
0.35
1.0
2.0
1.0
5.0
1.1
9.5
4.0
5.5
0.5
-
-
-
-
-
Rev 2.200
UNIT
UNIT
UNIT
mA
mA
mA
pF
pF
V
V
V
V
V
s
s
s
s

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