BU2520D Philips Semiconductors, BU2520D Datasheet

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BU2520D

Manufacturer Part Number
BU2520D
Description
Silicon Diffused Power Transistor
Manufacturer
Philips Semiconductors
Datasheet

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Philips Semiconductors
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic
envelope intended for use in horizontal deflection circuits of large screen colour television receivers.
QUICK REFERENCE DATA
PINNING - SOT93
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
THERMAL RESISTANCES
1 Turn-off current.
November 1995
Silicon Diffused Power Transistor
SYMBOL
V
V
I
I
P
V
I
V
t
SYMBOL
V
V
I
I
I
I
-I
-I
P
T
T
SYMBOL
R
R
C
CM
Csat
f
C
CM
B
BM
PIN
B(AV)
BM
stg
j
CESM
CEO
tot
CEsat
F
tab
CESM
CEO
tot
th j-mb
th j-a
1
2
3
base
collector
emitter
collector
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Fall time
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value
Total power dissipation
Storage temperature
Junction temperature
PARAMETER
Junction to mounting base
Junction to ambient
DESCRIPTION
PIN CONFIGURATION
1
tab
1
CONDITIONS
V
T
I
I
I
CONDITIONS
V
average over any 20 ms period
T
CONDITIONS
-
in free air
C
F
CM
BE
mb
BE
mb
1
2
= 6.0 A
= 6.0 A; I
= 6.0 A; I
= 0 V
= 0 V
3
25 ˚C
25 ˚C
B
B(end)
= 1.2 A
= 1.0 A
SYMBOL
b
TYP.
TYP.
MIN.
0.35
Product specification
-65
45
6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Rbe
MAX.
MAX.
MAX.
1500
e
1500
c
BU2520D
800
125
800
150
125
150
150
5.0
2.2
0.5
1.0
10
25
10
25
6
9
6
-
-
Rev 1.200
UNIT
UNIT
UNIT
K/W
K/W
mA
W
W
˚C
˚C
V
V
A
A
V
A
V
V
V
A
A
A
A
A
s

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BU2520D Summary of contents

Page 1

... B(end) PIN CONFIGURATION tab CONDITIONS average over any 20 ms period ˚C mb CONDITIONS - in free air 1 Product specification BU2520D TYP. MAX. UNIT - 1500 V - 800 125 2.2 V 0.35 0.5 s SYMBOL c b ...

Page 2

... CONDITIONS MHz 6 650 1 5 B(end) B (-dI / ICM t IC IBend Fig.2. Switching times definitions. 2 Product specification BU2520D MIN. TYP. MAX. UNIT - - 1 2.0 mA 100 - 300 mA 7.5 13 800 - - 5 ...

Page 3

... Product specification BU2520D VCESAT / V BU2520D IC/ 125 sat = parameter VBESAT / V BU2520D 125 sat = parameter VCESAT / V BU2520D 125 ...

Page 4

... Fig.13. Forward bias safe operating area & I CDC = Second-breakdown limits independant of temperature Product specification BU2520D Zth / (K/W) 0.5 0.2 0.1 0.05 0. 1E-04 1E-02 1E+ Fig.12. Transient thermal impedance f(t); parameter j- ...

Page 5

... Notes 1. Refer to mounting instructions for SOT93 envelope. 2. Epoxy meets UL94 V0 at 1/8". November 1995 15.2 max 14 13.6 2 max 4.25 4.15 2.2 max 0.5 min 5.5 1.15 0.95 11 Fig.14. SOT93; pin 2 connected to mounting base. 5 Product specification BU2520D 4.6 max 2 4.4 21 max 12.7 max 13.6 min 0.5 0.4 M 1.6 Rev 1.200 ...

Page 6

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. November 1995 6 Product specification BU2520D Rev 1.200 ...

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