BU2520DW Philips Semiconductors, BU2520DW Datasheet - Page 4

• Manufacturer Part Number: BU2520DW
• Description: Silicon Diffused Power Transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
September 1997
Silicon Diffused Power Transistor
ts = f (I
Eoff = f (I
Fig.10. Typical collector storage and fall time.
1000
12
11
10
120
110
100
9
8
7
6
5
4
3
2
1
0
100
90
80
70
60
50
40
30
20
10
10
0
Fig.9. Typical turn-off losses. T
B
0.1
Fig.11. Normalised power dissipation.
); tf = f (I
ts, tf / us
0.1
0
PD%
Eoff / uJ
PD% = 100 P
B
); parameter I
20
B
IC = 6 A
); parameter I
40
5 A
60
5 A
D
Tmb / C
IB / A
/P
IB / A
C
1
; parameter frequency
1
D 25˚C
80
Normalised Power Derating
C
; T
IC =
6 A
= f (T
100
j
= 85˚C; f = 16 kHz
j
mb
120
= 85˚C
)
ts
tf
140
10
10
4
Second-breakdown limits independant of temperature.
Fig.13. Forward bias safe operating area. T
I
CDC
0.001
0.01
100
0.01
0.1
0.1
10
10
1
& I
1
1E-06
Fig.12. Transient thermal impedance.
1
IC / A
Zth / (K/W)
ICDC
ICM
CM
D = 0
Z
0.05
0.02
0.5
0.2
0.1
th j-mb
= f(V
= f(t); parameter D = t
CE
10
Ptot
1E-04
); I
CM
= 0.01
single pulse; parameter t
100
t / s
1E-02
Product specification
P
D
1000
BU2520DW
10 ms
100 us
1 ms
tp =
t
30 us
DC
p
p
/T
T
1E+00
BU2520A
VCE / V
D =
mb
Rev 1.100
= 25 ˚C
t
T
p
t
p