BU2520DX Philips Semiconductors, BU2520DX Datasheet

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BU2520DX

Manufacturer Part Number
BU2520DX
Description
Silicon Diffused Power Transistor
Manufacturer
Philips Semiconductors
Datasheet

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Part Number:
BU2520DX
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Part Number:
BU2520DX
Manufacturer:
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Quantity:
12 456
Philips Semiconductors
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a full plastic
envelope intended for use in horizontal deflection circuits of large screen colour television receivers.
QUICK REFERENCE DATA
PINNING - SOT399
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
THERMAL RESISTANCES
1 Turn-off current.
September 1997
Silicon Diffused Power Transistor
SYMBOL
V
V
I
I
P
V
I
V
t
SYMBOL
V
V
I
I
I
I
-I
-I
P
T
T
SYMBOL
R
R
C
CM
Csat
f
case isolated
C
CM
B
BM
PIN
B(AV)
BM
stg
j
CESM
CEO
tot
CEsat
F
CESM
CEO
tot
th j-hs
th j-a
1
2
3
base
collector
emitter
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Fall time
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value
Total power dissipation
Storage temperature
Junction temperature
PARAMETER
Junction to heatsink
Junction to ambient
DESCRIPTION
PIN CONFIGURATION
1
case
CONDITIONS
V
T
I
I
I
CONDITIONS
V
average over any 20 ms period
T
CONDITIONS
with heatsink compound
in free air
1 2 3
C
F
Csat
BE
hs
BE
hs
1
= 6.0 A
= 6.0 A; I
= 0 V
= 6.0 A; I
= 0 V
25 ˚C
25 ˚C
B
= 1.2 A
B(end)
= 1.0 A
SYMBOL
b
TYP.
TYP.
MIN.
0.35
Product specification
-55
35
6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Rbe
BU2520DX
MAX.
MAX.
MAX.
1500
e
1500
c
800
800
150
150
150
5.0
2.2
0.5
2.8
10
25
45
10
25
45
6
9
6
-
-
Rev 2.300
UNIT
UNIT
UNIT
K/W
K/W
mA
W
W
˚C
˚C
V
V
A
A
V
A
V
V
V
A
A
A
A
A
s

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BU2520DX Summary of contents

Page 1

... 1.0 A Csat B(end) PIN CONFIGURATION case CONDITIONS average over any 20 ms period ˚C hs CONDITIONS with heatsink compound in free air 1 Product specification BU2520DX TYP. MAX. UNIT - 1500 V - 800 5 2.2 V 0.35 ...

Page 2

... CONDITIONS MHz 6 650 H; C Csat 1 5 B(end) B (-dI / Product specification BU2520DX MIN. TYP. MAX. UNIT - 2500 MIN. TYP. MAX. UNIT - - 1 2.0 mA 100 - 300 mA 7.5 13.5 ...

Page 3

... IBM Fig.5. Typical base-emitter saturation voltage. + 150 v nominal 1.0 adjust for ICsat 0.9 0.8 0.7 Lc 0.6 0.5 0.4 0.3 Cfb 0.2 0.1 0 0.1 Fig.6. Typical collector-emitter saturation voltage. 3 Product specification BU2520DX hFE 125 parameter V CE VBESAT / 125 C IC/IB sat = parameter I ...

Page 4

... Fig.11. Normalised power dissipation. C Zth / (K/W) 10 0.5 1 0.2 0.1 0.05 0.1 0.02 0. 0.001 1E- 85˚C Fig.12. Transient thermal impedance Product specification BU2520DX parameter 85˚ kHz Normalised Power Derating with heatsink compound 100 120 140 Ths / C ...

Page 5

... Fig.13. Forward bias safe operating area & f single pulse; parameter t CDC Second-breakdown limits independant of temperature. Mounted with heatsink compound. September 1997 BU2520AF 100 1000 VCE / ˚ Product specification BU2520DX Rev 2.300 ...

Page 6

... Net Mass: 5.88 g 4.5 27 max 22.5 max 18.1 min Fig.14. SOT399; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". September 1997 16.0 max 0.7 10.0 25.1 25.7 5.1 2.2 max 4.5 1.1 0.4 M 5.45 5.45 6 Product specification BU2520DX 5.8 max 3.0 3 0.95 max 3.3 Rev 2.300 ...

Page 7

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1997 7 Product specification BU2520DX Rev 2.300 ...

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