BU2522AF Philips Semiconductors, BU2522AF Datasheet

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BU2522AF

Manufacturer Part Number
BU2522AF
Description
Silicon Diffused Power Transistor
Manufacturer
Philips Semiconductors
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BU2522AF
Manufacturer:
RENE
Quantity:
4 264
Part Number:
BU2522AF
Manufacturer:
PHILIPS/飞利浦
Quantity:
20 000
Philips Semiconductors
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in
horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for
use in horizontal deflection circuits of pc monitors.
QUICK REFERENCE DATA
PINNING - SOT199
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
THERMAL RESISTANCES
1 Turn-off current.
September 1997
Silicon Diffused Power Transistor
SYMBOL
V
V
I
I
P
V
I
t
SYMBOL
V
V
I
I
I
I
-I
-I
P
T
T
SYMBOL
R
R
C
CM
Csat
f
case isolated
C
CM
B
BM
PIN
B(AV)
BM
stg
j
CESM
CEO
tot
CEsat
CESM
CEO
tot
th j-hs
th j-a
1
2
3
base
collector
emitter
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Fall time
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value
Total power dissipation
Storage temperature
Junction temperature
PARAMETER
Junction to heatsink
Junction to ambient
DESCRIPTION
PIN CONFIGURATION
1
case
1
CONDITIONS
V
T
I
f = 64 kHz
I
CONDITIONS
V
average over any 20 ms period
T
CONDITIONS
with heatsink compound
in free air
C
Csat
BE
hs
BE
hs
1
= 6.0 A; I
2
= 0 V
= 6.0 A; f = 64 kHz
= 0 V
25 ˚C
3
25 ˚C
B
= 1.2 A
SYMBOL
b
TYP.
TYP.
MIN.
0.16
Product specification
6.0
-65
35
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
BU2522AF
MAX.
MAX.
MAX.
1500
e
1500
c
0.22
800
800
150
150
150
5.0
2.8
10
25
45
10
25
45
6
9
6
-
-
Rev 1.400
UNIT
UNIT
UNIT
K/W
K/W
mA
W
W
˚C
˚C
V
V
A
A
V
A
V
V
A
A
A
A
A
s

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BU2522AF Summary of contents

Page 1

... kHz kHz Csat PIN CONFIGURATION case CONDITIONS average over any 20 ms period ˚C hs CONDITIONS with heatsink compound in free air 1 Product specification BU2522AF TYP. MAX. UNIT - 1500 V - 800 5 0.16 0.22 s ...

Page 2

... CONDITIONS MHz 6 170 H; Csat 5 B(end 0 (-dI /dt 3. Product specification BU2522AF MIN. TYP. MAX. UNIT - 2500 MIN. TYP. MAX. UNIT - - 0. 2 0.25 mA 7.5 13 800 ...

Page 3

... VCEOsust . Fig.5. Switching times test circuit . CEOsust ICsat t I end B t IBend -VBB t Fig.6. Test Circuit RBSOA 100 - 400 Product specification BU2522AF ICsat IBend t - IBM + 150 v nominal adjust for ICsat Lc LB T.U.T. Cfb VCC LC LB T.U.T. = 140 V; -V ...

Page 4

... 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1 sat = parameter PTOT / W BU2522AF/DF/AX/DX Ths = 25 C Ths = 85 C 0 85˚ parameter kHz B C BU2522AF ts 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1 parameter kHz 85˚C; ...

Page 5

... 0. Fig.16. Forward bias safe operating area. T 1E+00 I & I CDC Second-breakdown limits independant of temperature BU2522AF 1500 T j jmax 5 Product specification BU2522AF BU2520AF tp = ICM = 0. ICDC 100 us Ptot 100 1000 VCE / single pulse; parameter t CM ...

Page 6

... Fig.17. SOT199; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". September 1997 15.3 max 3.1 3.3 7.3 6.2 5.8 3 1.2 1.0 5.45 5.45 6 Product specification BU2522AF 5.2 max 3.2 seating plane 3.5 max not tinned 0.7 max 0.4 M 2.0 Rev 1.400 o 45 ...

Page 7

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1997 7 Product specification BU2522AF Rev 1.400 ...

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