BU2522DX Philips Semiconductors, BU2522DX Datasheet

no-image

BU2522DX

Manufacturer Part Number
BU2522DX
Description
Silicon Diffused Power Transistor
Manufacturer
Philips Semiconductors
Datasheet
Philips Semiconductors
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic
full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved
RBSOA performance and is suitable for use in horizontal deflection circuits of pc monitors.
QUICK REFERENCE DATA
PINNING - SOT399
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
THERMAL RESISTANCES
1 Turn-off current.
September 1997
Silicon Diffused Power Transistor
SYMBOL
V
V
I
I
P
V
I
V
t
SYMBOL
V
V
I
I
I
I
-I
-I
P
T
T
SYMBOL
R
R
C
CM
Csat
f
case isolated
C
CM
B
BM
PIN
B(AV)
BM
stg
j
CESM
CEO
tot
CEsat
F
CESM
CEO
tot
th j-hs
th j-a
1
2
3
base
collector
emitter
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Fall time
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value
Total power dissipation
Storage temperature
Junction temperature
PARAMETER
Junction to heatsink
Junction to ambient
DESCRIPTION
PIN CONFIGURATION
1
case
CONDITIONS
V
T
I
f = 64 kHz
I
I
CONDITIONS
V
average over any 20 ms period
T
CONDITIONS
with heatsink compound
in free air
1 2 3
C
F
Csat
BE
hs
BE
hs
1
= 6.0 A
= 6.0 A; I
= 0 V
= 6.0 A; f = 64 kHz
= 0 V
25 ˚C
25 ˚C
B
= 1.2 A
SYMBOL
b
TYP.
TYP.
MIN.
0.12
Product specification
-65
35
6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Rbe
BU2522DX
MAX.
MAX.
MAX.
1500
e
1500
c
0.25
800
800
150
150
150
5.0
2.2
2.8
10
25
45
10
25
45
6
9
6
-
-
Rev 1.200
UNIT
UNIT
UNIT
K/W
K/W
mA
W
W
˚C
˚C
V
V
A
A
V
A
V
V
V
A
A
A
A
A
s

Related parts for BU2522DX

BU2522DX Summary of contents

Page 1

... kHz kHz Csat PIN CONFIGURATION case CONDITIONS average over any 20 ms period ˚C hs CONDITIONS with heatsink compound in free air 1 Product specification BU2522DX TYP. MAX. UNIT - 1500 V - 800 5 ...

Page 2

... CONDITIONS MHz 6 170 0 0 B(end) B (-dI / Product specification BU2522DX MIN. TYP. MAX. UNIT - 2500 MIN. TYP. MAX. UNIT - - 1 2 150 - mA 7.5 13 ...

Page 3

... IBM Fig.5. Typical DC current gain 150 v nominal 1.2 adjust for ICsat 1.1 1.0 Lc 0.9 0.8 0.7 0.6 Cfb 0.5 0.4 0.1 Fig.6. Typical base-emitter saturation voltage. 3 Product specification BU2522DX VCC LC LB T.U.T. Rbe = 140 1500 2.2 nF; I (end hFE 125 ...

Page 4

... Fig.11. Typical collector storage and fall time 120 110 Tj = 125 C 100 Fig.12. Normalised power dissipation Product specification BU2522DX BU2522AF Poff / 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1 85˚C j Poff = parameter kHz B C BU2522AF ts 0.2 0.4 0.6 0 ...

Page 5

... 1E+ BU2522AF 0.1 0.01 Fig.15. Forward bias safe operating area. T 1500 I & I CDC T Second-breakdown limits independant of temperature. j jmax 5 Product specification BU2522DX BU2520AF tp = ICM = 0. ICDC 100 us Ptot 100 1000 VCE / single pulse; parameter Mounted with heatsink compound ˚ ...

Page 6

... Net Mass: 5.88 g 4.5 27 max 22.5 max 18.1 min Fig.16. SOT399; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". September 1997 16.0 max 0.7 10.0 25.1 25.7 5.1 2.2 max 4.5 1.1 0.4 M 5.45 5.45 6 Product specification BU2522DX 5.8 max 3.0 3 0.95 max 3.3 Rev 1.200 ...

Page 7

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1997 7 Product specification BU2522DX Rev 1.200 ...

Related keywords