BU2523DF Philips Semiconductors, BU2523DF Datasheet

no-image

BU2523DF

Manufacturer Part Number
BU2523DF
Description
Silicon Diffused Power Transistor
Manufacturer
Philips Semiconductors
Datasheet
Philips Semiconductors
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a full plastic
envelope intended for use in horizontal deflection circuits of HDTV receivers and pc monitors.
QUICK REFERENCE DATA
PINNING - SOT199
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
THERMAL RESISTANCES
1 Turn-off current.
September 1997
Silicon Diffused Power Transistor
SYMBOL
V
V
I
I
P
V
I
V
t
SYMBOL
V
V
I
I
I
I
-I
-I
P
T
T
SYMBOL
R
R
C
CM
Csat
f
case isolated
C
CM
B
BM
PIN
B(AV)
BM
stg
j
CESM
CEO
tot
CEsat
F
CESM
CEO
tot
th j-hs
th j-a
1
2
3
base
collector
emitter
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Fall time
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value
Total power dissipation
Storage temperature
Junction temperature
PARAMETER
Junction to heatsink
Junction to ambient
DESCRIPTION
PIN CONFIGURATION
1
case
1
CONDITIONS
V
T
I
f = 64 kHz
I
I
CONDITIONS
V
average over any 20 ms period
T
CONDITIONS
with heatsink compound
in free air
C
F
Csat
BE
hs
BE
hs
1
= 5.5 A
= 5.5 A; I
2
= 0 V
= 5.5 A; f = 64 kHz
= 0 V
25 ˚C
3
25 ˚C
B
= 1.1 A
SYMBOL
b
TYP.
TYP.
MIN.
0.15
Product specification
5.5
-55
35
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Rbe
BU2523DF
MAX.
MAX.
MAX.
1500
e
1500
c
800
800
175
150
150
5.0
2.2
0.3
2.8
11
29
45
11
29
10
45
7
7
-
-
Rev 1.200
UNIT
UNIT
UNIT
K/W
K/W
mA
W
W
˚C
˚C
V
V
A
A
V
A
V
V
V
A
A
A
A
A
s

Related parts for BU2523DF

BU2523DF Summary of contents

Page 1

... 1 kHz kHz Csat PIN CONFIGURATION case CONDITIONS average over any 20 ms period ˚C hs CONDITIONS with heatsink compound in free air 1 Product specification BU2523DF TYP. MAX. UNIT - 1500 V - 800 5 2.2 V 0.15 0.3 ...

Page 2

... 5 CONDITIONS 200 H; C Csat 145 0. B(end Product specification BU2523DF MIN. TYP. MAX. UNIT - 2500 MIN. TYP. MAX. UNIT - - 1 2 130 170 mA 7.5 13 800 ...

Page 3

... ICsat Lc D.U.T. LB Cfb Rbe Fig.4. Switching times test circuit . BU2523DF/X VCE = 1 V Ths = 25 C Ths = BU2523DF/X VCE = 5 V Ths = 25 C Ths = 100 = 100 = Rev 1.200 ...

Page 4

... Fig.11. Normalised power dissipation. C BU2523AF/DF/AX/DX 10 Ths = 25 C Ths = 0.1 0.01 0.001 1.5 2 Fig.12. Transient thermal impedance. 4 Product specification BU2523DF BU2523AF/DF/AX/DX 0 85˚ kHz Normalised Power Derating PD% with heatsink compound 100 ...

Page 5

... Ic(sat) ( VCL 3 2 CFB 150 V; CC Fig.15 0 BU2523 Area where fails occur 1000 1500 T j jmax 5 Product specification BU2523DF BU2523AF/ frequency (kHz) during normal running vs. frequency of Csat operation for optimum performance 80 Rev 1.200 ...

Page 6

... Fig.16. SOT199; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". September 1997 15.3 max 3.1 3.3 7.3 6.2 5.8 3 1.2 1.0 5.45 5.45 6 Product specification BU2523DF 5.2 max 3.2 seating plane 3.5 max not tinned 0.7 max 0.4 M 2.0 Rev 1.200 o 45 ...

Page 7

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1997 7 Product specification BU2523DF Rev 1.200 ...

Related keywords