BU2530AL Philips Semiconductors, BU2530AL Datasheet

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BU2530AL

Manufacturer Part Number
BU2530AL
Description
Silicon Diffused Power Transistor
Manufacturer
Philips Semiconductors
Datasheet
Philips Semiconductors
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in
horizontal deflection circuits of large screen colour television receivers up to 32 kHz.
QUICK REFERENCE DATA
PINNING - SOT430
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
THERMAL RESISTANCES
1 Turn-off current.
September 1997
Silicon Diffused Power Transistor
SYMBOL
V
V
I
I
P
V
I
t
SYMBOL
V
V
I
I
I
I
-I
-I
P
T
T
SYMBOL
R
R
C
CM
Csat
s
C
CM
B
BM
heat collector
PIN
sink
B(AV)
BM
stg
j
CESM
CEO
tot
CEsat
CESM
CEO
tot
th j-mb
th j-a
1
2
3
base
collector
emitter
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Storage time
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value
Total power dissipation
Storage temperature
Junction temperature
PARAMETER
Junction to mounting base
Junction to ambient
DESCRIPTION
PIN CONFIGURATION
1
1
CONDITIONS
V
T
I
I
CONDITIONS
V
average over any 20 ms period
T
CONDITIONS
-
in free air
C
Csat
2
BE
mb
BE
mb
1
= 9.0 A; I
3
= 0
= 9.0 A; I
= 0 V
25 ˚C
25 ˚C
B
= 1.64 A
B(end)
= 1.3 A
SYMBOL
b
TYP.
TYP.
MIN.
Product specification
3.5
-55
35
9
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
BU2530AL
MAX.
MAX.
MAX.
1500
e
1500
c
800
125
800
200
125
150
150
5.0
4.5
1.0
16
40
16
40
10
15
10
-
-
Rev 1.200
UNIT
UNIT
UNIT
K/W
K/W
mA
W
W
˚C
˚C
V
V
A
A
V
A
V
V
A
A
A
A
A
s

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BU2530AL Summary of contents

Page 1

... ˚ 1.3 A Csat B(end) PIN CONFIGURATION CONDITIONS average over any 20 ms period ˚C mb CONDITIONS - in free air 1 Product specification BU2530AL TYP. MAX. UNIT - 1500 V - 800 125 3.5 4.5 s SYMBOL MIN. ...

Page 2

... CONDITIONS 200 H; C Csat 138 1 B(end 4 ICsat t IC IBend Fig.2. Switching times definitions. 2 Product specification BU2530AL MIN. TYP. MAX. UNIT - - 1 2 1 TYP ...

Page 3

... BU2530/2AL sat = parameter BU2530AL Fig.8. Typical turn-off losses parameter kHz TOT B C 100 4 4 Rev 1.200 ...

Page 4

... Fig.13. Reverse bias safe operating area BU2530AL/32AL 1E+ Product specification BU2530AL VCC LC LB T.U.T. = 150 1.5 mH 1450 nF 1 B(end) BU2530/32AL Area where fails occur ...

Page 5

... Philips Semiconductors Silicon Diffused Power Transistor MECHANICAL DATA Dimensions in mm Net Mass 25.5 26.5 2.5 19.5 min September 1997 20.5 max 3.1 3.5 6.0 10.0 1.5 1.5 2.5 max 3.5 max 0.8 1.0 5.45 5.45 Fig.14. SOT430; pin 2 connected to mounting base. 5 Product specification BU2530AL 5.3 max 3.0 3.0 4.0 3.0 seating plane 0.8 max 0.4 M 3.0 max Rev 1.200 ...

Page 6

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1997 6 Product specification BU2530AL Rev 1.200 ...

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