BU2532AW Philips Semiconductors, BU2532AW Datasheet
BU2532AW
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BU2532AW Summary of contents
Page 1
... T 25 ˚ 7 1. kHz kHz Csat PIN CONFIGURATION CONDITIONS average over any 20 ms period ˚C mb CONDITIONS - in free air 1 Initial specification BU2532AW TYP. MAX. UNIT - 1500 V - 800 125 1.4 1.8 s SYMBOL c ...
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... CONDITIONS 100 H; C Csat 138 1 B(end) 2 Initial specification BU2532AW MIN. TYP. MAX. UNIT - - 1 2 1 5.0 V 0.80 0.88 0. 12.5 TYP. MAX. ...
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... IBM Fig.5. High and low DC current gain 150 v nominal VCEsat / V 10 adjust for ICsat Lc 1 0.1 Cfb 0.01 0.1 Fig.6. Typical collector-emitter saturation voltage. 3 Initial specification BU2532AW BU2530/2AL VCE = 0 BU2530/2AL VCE = 0.1 1 ...
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... Fig.11. Reverse bias safe operating area BU2525A 1E+ Initial specification BU2532AW VCC LC LB T.U.T. = 150 1.5 mH 1450 0 nF 1 B(end) BU2530/32AL Area where fails occur 1000 ...
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... Net Mass 3.5 21 max 4.0 max 15.5 min 2.2 max 3.2 max Notes 1. Refer to mounting instructions for SOT429 envelope. 2. Epoxy meets UL94 V0 at 1/8". September 1997 16 max 1.8 5.3 7.3 seating 15.5 max plane 2 1.1 0.4 M 5.45 5.45 Fig.12. SOT429; pin 2 connected to mounting base. 5 Initial specification BU2532AW 5.3 max o 3.5 max 0.9 max Rev 1.000 ...
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... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1997 6 Initial specification BU2532AW Rev 1.000 ...