STD90NH02L ST Microelectronics, Inc., STD90NH02L Datasheet

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STD90NH02L

Manufacturer Part Number
STD90NH02L
Description
N-channel 24V - 0.0052 Ohm - 60A Dpak/ipak StripFET Iii Power MOSFET
Manufacturer
ST Microelectronics, Inc.
Datasheet

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DESCRIPTION
The STD90NH02L utilizes the latest advanced design
rules of ST’s proprietary STripFET™ technology. This is
suitable fot the most demanding DC-DC converter
application where high efficiency is to be achieved.
APPLICATIONS
Ordering Information
ABSOLUTE MAXIMUM RATINGS
September 2003
STD90NH02L
STD90NH02LT4
STD90NH02L-1
TYPICAL R
TYPICAL R
R
CONDUCTION LOSSES REDUCED
SWITCHING LOSSES REDUCED
LOW THRESHOLD DEVICE
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX “-1")
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY DC/DC CONVERTES
Symbol
V
E
I
DS(ON)
V
spike(1)
DM
I
I
V
V
P
AS (4)
T
D
D
DGR
T
GS
stg
DS
(2)
(2)
TYPE
tot
(3
j
SALES TYPE
* Qg INDUSTRY’s BENCHMARK
Drain-source Voltage Rating
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Single Pulse Avalanche Energy
Storage Temperature
Max. Operating Junction Temperature
DS
DS
(on) = 0.0052
(on) = 0.007
V
24 V
DSS
N-CHANNEL 24V - 0.0052
Parameter
< 0.006
R
DS(on)
@ 5 V
C
GS
@ 10 V
= 25°C
GS
= 20 k )
D90NH02L
D90NH02L
MARKING
= 0)
60 A(2)
C
C
= 25°C
= 100°C
I
D
STripFET™ III POWER MOSFET
INTERNAL SCHEMATIC DIAGRAM
PACKAGE
(Suffix “-1”)
TO-252
TO-251
TO-251
IPAK
-55 to 175
Value
± 20
0.63
240
600
30
24
24
60
60
95
1
2
- 60A DPAK/IPAK
STD90NH02L
3
TAPE & REEL
PACKAGING
(Suffix “T4”)
TO-252
TUBE
DPAK
1
W/°C
Unit
mJ
3
°C
W
V
V
V
V
A
A
A
1/12

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STD90NH02L Summary of contents

Page 1

... PACKAGE IN TUBE (SUFFIX “-1") SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX “T4") DESCRIPTION The STD90NH02L utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This is suitable fot the most demanding DC-DC converter application where high efficiency achieved. APPLICATIONS ...

Page 2

... STD90NH02L THERMAL DATA Rthj-case Thermal Resistance Junction-case Rthj-amb Thermal Resistance Junction-ambient T Maximum Lead Temperature For Soldering Purpose l ELECTRICAL CHARACTERISTICS (T OFF Symbol Parameter Drain-source V (BR)DSS Breakdown Voltage Zero Gate Voltage I DSS Drain Current (V GS Gate-body Leakage I GSS Current ( (5) ON Symbol Parameter ...

Page 3

... STD90NH02L ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Turn-on Delay Time t d(on) Rise Time Total Gate Charge Source g Q Gate Charge gs Gate-Drain Charge Q gd oss (6) Q Output Charge gls (7) Q Third-quadrant Gate Charge SWITCHING OFF Symbol Parameter t Turn-off Delay Time d(off) Fall Time ...

Page 4

... STD90NH02L Output Characteristics Transconductance Gate Charge vs Gate-source Voltage 4/12 Transfer Characteristics Static Drain-source On Resistance Capacitance Variations ...

Page 5

... STD90NH02L Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics . Normalized on Resistance vs Temperature Normalized Breakdown Voltage vs Temperature. . 5/12 ...

Page 6

... STD90NH02L Fig. 1: Unclamped Inductive Load Test Circuit Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/12 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...

Page 7

... STD90NH02L TO-251 (IPAK) MECHANICAL DATA DIM. MIN. A 2.2 A1 0.9 A3 0.7 B 0. 0. 6.4 G 4 TYP. MAX. MIN. 2.4 0.086 1.1 0.035 1.3 0.027 0.9 0.025 5.4 0.204 0.85 0.3 0.95 0.6 0.017 0.6 0.019 6.2 0.236 6.6 0.252 4.6 0.173 16.3 0.626 9.4 0.354 1.2 0.031 0 inch TYP. MAX. 0.094 0.043 0.051 ...

Page 8

... STD90NH02L TO-252 (DPAK) MECHANICAL DATA DIM. MIN. A 2.2 A1 0.9 A2 0.03 B 0.64 B2 5.2 C 0. 6.4 G 4 0.6 L2 8/12 mm TYP. MAX. 2.4 1.1 0.23 0.9 5.4 0.6 0.6 6.2 6.6 4.6 10.1 0 DETAIL "A" inch MIN. TYP. MAX. 0.086 0.094 0.035 0.043 0.001 0.009 0.025 0.035 0.204 0.212 0.017 0.023 0.019 0.023 0.236 ...

Page 9

... STD90NH02L 9/12 ...

Page 10

... STD90NH02L Buck Converter: Power Losses Estimation The power losses associated with the FETs in a Synchronous Buck converter can be estimated using the equations shown in the table below. The formulas give a good approximation, for the sake of performan ce comparison, of how different pairs of devices affect the converter efficiency. However a very important parameter, the working temperature, is not considered ...

Page 11

... STD90NH02L P conduction P switching Recovery P diode Conduction P gate Qoss Parameter d Q gsth Q gls Pconduction Pswitching Pdiode Pgate P Qoss 1 Dissipated by SW1 during turn-on High Side Switch (SW1 DS(on)SW1 gsth(SW1) gd(SW1) Not Applicable Not Applicable g(SW1 ...

Page 12

... STD90NH02L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...

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