BU1508DX Philips Semiconductors, BU1508DX Datasheet

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BU1508DX

Manufacturer Part Number
BU1508DX
Description
Silicon Diffused Power Transistor
Manufacturer
Philips Semiconductors
Datasheet
Philips Semiconductors
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated
damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television
receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low
worst case dissipation.
QUICK REFERENCE DATA
PINNING - SOT186A
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
THERMAL RESISTANCES
1 Turn-off current.
September 1997
Silicon Diffused Power Transistor
SYMBOL
V
V
I
I
P
V
I
V
t
SYMBOL
V
V
I
I
I
I
-I
-I
P
T
T
SYMBOL
R
R
C
CM
Csat
f
case isolated
C
CM
B
BM
PIN
B(AV)
BM
stg
j
CESM
CEO
tot
CEsat
F
CESM
CEO
tot
th j-hs
th j-a
1
2
3
base
collector
emitter
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Fall time
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value
Total power dissipation
Storage temperature
Junction temperature
PARAMETER
Junction to heatsink
Junction to ambient
DESCRIPTION
PIN CONFIGURATION
1
case
CONDITIONS
V
T
I
I
I
CONDITIONS
V
average over any 20 ms period
T
CONDITIONS
with heatsink compound
in free air
C
F
CM
1 2 3
BE
hs
BE
hs
1
= 4.5 A
= 4.5 A; I
= 4.5 A; I
= 0 V
= 0 V
25 ˚C
25 ˚C
B
B(end)
= 1.1 A
= 1.1 A
SYMBOL
b
TYP.
TYP.
MIN.
Product specification
4.5
1.6
0.4
-65
55
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Rbe
BU1508DX
MAX.
MAX.
MAX.
1500
e
1500
c
700
700
100
150
150
1.0
0.6
3.6
15
35
15
35
8
8
4
6
5
-
-
-
Rev 1.300
UNIT
UNIT
UNIT
K/W
K/W
mA
W
W
˚C
˚C
V
V
A
A
V
A
V
V
V
A
A
A
A
A
s

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BU1508DX Summary of contents

Page 1

... B(end) PIN CONFIGURATION case CONDITIONS average over any 20 ms period ˚C hs CONDITIONS with heatsink compound in free air 1 Product specification BU1508DX TYP. MAX. UNIT - 1500 V - 700 1 0.4 0.6 s ...

Page 2

... 4 4 CONDITIONS MHz 4 1 B(end (-dI / Product specification BU1508DX MIN. TYP. MAX. UNIT - 2500 MIN. TYP. MAX. UNIT - - 1 2.0 mA 140 - 390 mA 7.5 13 ...

Page 3

... IBM Fig.5. Typical base-emitter saturation voltage. + 150 v nominal 1.0 adjust for ICsat 0.9 0.8 0.7 1mH 0.6 0.5 0.4 0.3 12nF 0.2 0.1 0 0.1 Fig.6. Typical collector-emitter saturation voltage. 3 Product specification BU1508DX 125 0 parameter V CE VBESAT / 125 C IC/IB sat = parameter ...

Page 4

... Fig.11. Normalised power dissipation. C Zth / (K/ 0.05 0.02 0 0.01 10 1E-06 = 85˚C Fig.12. Transient thermal impedance Product specification BU1508DX 4.5A 3. parameter 85˚ Normalised Power Derating with heatsink compound 100 120 140 ...

Page 5

... Fig.13. Forward bias safe operating area. T Region of permissible DC operation Extension for repetitive pulse operation. NB: Mounted with heatsink compound and 30 5 newton force on the centre of the envelope. September 1997 100 1000 VCE / V = 25˚ Product specification BU1508DX Rev 1.300 ...

Page 6

... Fig.14. SOT186A; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". September 1997 10.3 max 3.2 3.0 2.8 seating 15.8 19 max. max. plane 3 2 2.54 0.5 5.08 6 Product specification BU1508DX 4.6 max 2.9 max 6.4 15.8 max 0.6 2.5 1.3 Rev 1.300 1.0 (2x) 0.9 0.7 ...

Page 7

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1997 7 Product specification BU1508DX Rev 1.300 ...

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