VF20120C Vishay, VF20120C Datasheet

no-image

VF20120C

Manufacturer Part Number
VF20120C
Description
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Manufacturer
Vishay
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
VF20120C-E3/4W
Manufacturer:
vishay
Quantity:
1 000
Part Number:
VF20120C-E3/4W
Manufacturer:
VISHAY
Quantity:
22 976
Company:
Part Number:
VF20120C-M3/4W
Quantity:
70 000
Company:
Part Number:
VF20120C-M3/4W
Quantity:
70 000
Document Number: 89040
Revision: 24-Jun-09
PRIMARY CHARACTERISTICS
MAXIMUM RATINGS (T
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
Non-repetitive avalanche energy
at T
Peak repetitive reverse current at t
T
Voltage rate of change (rated V
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
Operating junction and storage temperature range
J
= 38 °C ± 2 °C per diode
J
PIN 1
PIN 2
PIN 1
PIN 3
= 25 °C, L = 60 mH per diode
K
V
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
TO-220AB
TO-263AB
V20120C
VB20120C
F
at I
T
V
I
J
I
F(AV)
FSM
RRM
F
max.
= 10 A
1
HEATSINK
CASE
K
PIN 2
2
1
2
TMBS
3
PDD-Americas@vishay.com, PDD-Asia@vishay.com,
For technical questions within your region, please contact one of the following:
R
)
p
A
®
= 2 µs, 1 kHz,
= 25 °C unless otherwise noted)
K
PIN 1
PIN 3
PIN 1
PIN 3
TO-262AA
ITO-220AB
VF20120C
VI20120C
2 x 10 A
Ultra Low V
150 °C
0.64 V
120 V
120 A
V20120C, VF20120C, VB20120C & VI20120C
per device
per diode
PIN 2
PIN 2
K
1
1
New Product
2
2
3
3
F
SYMBOL
T
= 0.54 V at I
J
V
I
dV/dt
I
I
F(AV)
, T
E
V
RRM
FSM
RRM
AC
AS
STG
www.DataSheet.co.kr
FEATURES
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
MECHANICAL DATA
Case:
TO-262AA
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
• Trench MOS Schottky technology
• Low forward voltage drop, low power
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF
• Solder bath temperature 275 °C maximum, 10 s,
• Compliant to RoHS directive 2002/95/EC and in
V20120C
losses
maximum peak of 245 °C (for TO-263AB package)
per JESD 22-B106 (for TO-220AB, ITO-220AB and
TO-262AA package)
accordance to WEEE 2002/96/EC
F
PDD-Europe@vishay.com
TO-220AB,
= 5 A
Vishay General Semiconductor
VF20120C
- 40 to + 150
10 000
1500
120
120
0.5
20
10
80
ITO-220AB,
VB20120C
VI20120C
TO-263AB
www.vishay.com
UNIT
V/µs
mJ
°C
V
A
A
A
V
and
1
Datasheet pdf - http://www.DataSheet4U.net/

Related parts for VF20120C

VF20120C Summary of contents

Page 1

... Operating junction and storage temperature range Document Number: 89040 For technical questions within your region, please contact one of the following: Revision: 24-Jun-09 PDD-Americas@vishay.com, PDD-Asia@vishay.com, New Product V20120C, VF20120C, VB20120C & VI20120C Vishay General Semiconductor Ultra Low FEATURES • ...

Page 2

... V20120C, VF20120C, VB20120C & VI20120C Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T PARAMETER Breakdown voltage (1) Instantaneous forward voltage per diode (2) Reverse current per diode Notes (1) Pulse test: 300 µs pulse width duty cycle Pulse test: Pulse width ≤ (2) THERMAL CHARACTERISTICS (T PARAMETER Typical thermal resistance per diode ...

Page 3

... Reverse Voltage (V) Figure 5. Typical Junction Capacitance Per Diode Document Number: 89040 For technical questions within your region, please contact one of the following: Revision: 24-Jun-09 PDD-Americas@vishay.com, PDD-Asia@vishay.com, New Product V20120C, VF20120C, VB20120C & VI20120C Vishay General Semiconductor 10 1 0.01 1.4 1.6 Figure 6. Typical Transient Thermal Impedance Per Diode ...

Page 4

... V20120C, VF20120C, VB20120C & VI20120C Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) MAX. 0.370 (9.40) 0.154 (3.91) 0.360 (9.14) 0.148 (3.74) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 0.635 (16.13) 0.625 (15.87) PIN 0.350 (8.89 0.330 (8.38) 0.160 (4.06) 1.148 (29.16) 0.140 (3.56) 1.118 (28.40) 0.057 (1.45) 0.045 (1.14) 0.560 (14.22) 0.530 (13.46) 0.105 (2.67) 0.095 (2.41) 0.035 (0.90) ...

Page 5

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

Related keywords