ZXMC3A16DN8 Zetex Semiconductors, ZXMC3A16DN8 Datasheet
ZXMC3A16DN8
Available stocks
Related parts for ZXMC3A16DN8
ZXMC3A16DN8 Summary of contents
Page 1
... LCD backlighting ORDERING INFORMATION DEVICE REEL TAPE WIDTH ZXMC3A16DN8TA 7 12mm ’‘ ZXMC3A16DN8TC 13’‘ 12mm DEVICE MARKING ZXMC 3A16 PROVISIONAL ISSUE F - JULY 2004 = 0.035 ; 0.048 ; I = -5. N-CHANNEL QUANTITY PER REEL 500 units 2500 units 1 ZXMC3A16DN8 SO8 Q2 = P-CHANNEL PINOUT Top view ...
Page 2
... ZXMC3A16DN8 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current@V =10V =10V =10V (c) Pulsed Drain Current Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) (a)(d) Power Dissipation at TA=25°C Linear Derating Factor (a)(e) Power Dissipation at TA=25°C Linear Derating Factor (b)(d) Power Dissipation at TA=25° ...
Page 3
... PROVISIONAL ISSUE F - JULY 2004 ZXMC3A16DN8 CHARACTERISTICS 3 ...
Page 4
... ZXMC3A16DN8 N-CHANNEL ELECTRICAL CHARACTERISTICS (at T PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1)(3) Forward Transconductance (3) DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance (2) (3) SWITCHING Turn-On Delay Time Rise Time ...
Page 5
... Reverse Recovery Charge NOTES (1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. PROVISIONAL ISSUE F - JULY 2004 ZXMC3A16DN8 = 25°C unless otherwise stated) amb SYMBOL MIN. TYP. ...
Page 6
... ZXMC3A16DN8 N-CHANNEL TYPICAL CHARACTERISTICS 10V T = 25° 0.1 0.01 0 Drain-Source Voltage (V) DS Output Characteristics 150° 25° Gate-Source Voltage (V) GS Typical Transfer Characteristics 100 2.5V 1 0.1 0.01 0 Drain Current (A) D On-Resistance v Drain Current T = 150° 2. ...
Page 7
... N-CHANNEL TYPICAL CHARACTERISTICS 1200 1000 800 C ISS C 600 OSS 400 200 0 0 Drain - Source Voltage (V) DS Capacitance v Drain-Source Voltage PROVISIONAL ISSUE F - JULY 2004 3. 1MHz RSS Charge (nC) Gate-Source Voltage v Gate Charge 7 ZXMC3A16DN8 V = 15V ...
Page 8
... ZXMC3A16DN8 P-CHANNEL TYPICAL CHARACTERISTICS 10V 25° 0.1 0.01 0 Drain-Source Voltage (V) DS Output Characteristics 150° 25° Gate-Source Voltage (V) GS Typical Transfer Characteristics 1.5V 100 - 0.1 0.01 0.01 0 Drain Current (A) D On-Resistance v Drain Current T = 150° ...
Page 9
... P-CHANNEL TYPICAL CHARACTERISTICS 1400 1200 1000 C 800 ISS C OSS 600 400 200 0 0 Drain - Source Voltage (V) DS Capacitance v Drain-Source Voltage PROVISIONAL ISSUE F - JULY 2004 4. 1MHz RSS Charge (nC) Gate-Source Voltage v Gate Charge 9 ZXMC3A16DN8 -V = 15V ...
Page 10
... ZXMC3A16DN8 PACKAGE OUTLINE CONTROLLING DIMENSIONS ARE IN INCHES APPROX IN MILLIMETERS PACKAGE DIMENSIONS Millimeters Inches DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.25 0.004 0.010 D 4.80 5.00 0.189 0.197 H 5.80 6.20 0.228 0.244 E 3.80 4.00 0.150 0.157 L 0.40 1.27 0.016 0.050 © Zetex Semiconductors plc 2004 Europe Americas Zetex GmbH Zetex Inc Streitfeldstraß ...