2SJ608 Sanyo Semicon Device, 2SJ608 Datasheet

2SJ608

Manufacturer Part Number

2SJ608

Description

Ultrahigh Speed Switching Applications

Manufacturer

Sanyo Semicon Device

Datasheet

1.2SJ608.pdf (3 pages)

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Ordering number : ENN6995

Features

Specifications

Absolute Maximum Ratings at Ta=25 C

Electrical Characteristics at Ta=25 C

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

•

Low ON-resistance.

Ultrahigh speed switching.

Low-voltage drive.

Mounting height 9.5mm.

Meets radial taping.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

SANYO Electric Co.,Ltd. Semiconductor Company

V (BR)DSS

V GS (off)

Symbol

V DSS

V GSS

I DSS

I GSS

Tstg

I DP

Tch

P D

yfs

I D

Ultrahigh Speed Switching Applications

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I D =--1mA, V GS =0

V DS =- -30V, V GS =0

V GS = 16V, V DS =0

V DS =- -10V, I D =--1mA

V DS =- -10V, I D =--2A

PW 10 s, duty cycle 1%

2SJ608

Conditions

Package Dimensions

unit : mm

2085A

Conditions

0.5

2.5

10.5

1.6

1.2

2.5

[2SJ608]

min

P-Channel Silicon MOSFET

--1.0

--30

2.9

62501 TS IM TA-2989

Ratings

1.9

typ

Ratings

1.2

1 : Source

2 : Drain

3 : Gate

SANYO : FLP

4.2

4.5

--55 to +150

Continued on next page.

0.5

2SJ608

max

1.4

2.6

150

--2.4

- -30

- -16

1.4

--4

--1

No.6995-1/4

Unit

Related parts for 2SJ608

2SJ608 Summary of contents

Page 1

... P D Tch Tstg Symbol Conditions V (BR)DSS I D =--1mA DSS -30V GSS 16V (off -10V =--1mA yfs -10V =--2A P-Channel Silicon MOSFET 2SJ608 [2SJ608] 4.5 1.9 2.6 10.5 1.2 1.4 1.2 0.5 1 Source 2 : Drain 3 : Gate 2.5 SANYO : FLP ...

Page 2

... See specified Test Circuit =--10V =--10V -4A Qgs V DS =--10V =--10V -4A Qgd V DS =--10V =--10V - =--4A --15V -- =7 OUT G 2SJ608 50 S www.DataSheet4U.com --2. --2.0V --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 IT02844 Ta=25 C --8 --10 ...

Page 3

... Drain Current --12 --10 --8 --6 --4 -- Total Gate Charge 2.0 1.5 1.4 1.0 0 Ambient Temperature www.DataSheet4U.com www.DataSheet4U.com 2SJ608 --10V --1.0 --10 IT02848 --15V --10V --1.0 --10 www.DataSheet4U.com IT02850 --10V ...

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