2SJ632 Sanyo Semicon Device, 2SJ632 Datasheet

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2SJ632

Manufacturer Part Number
2SJ632
Description
P CHANNEL MOS SILICON TRANSISTOR
Manufacturer
Sanyo Semicon Device
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SJ632
Manufacturer:
SANYO/三洋
Quantity:
20 000
Part Number:
2SJ632-TD-E
Manufacturer:
TOSHIBA
Quantity:
1 741
www.DataSheet4U.com
Ordering number : ENN7420
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Marking : GA
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
SANYO Electric Co.,Ltd. Semiconductor Company
V (BR)DSS
R DS (on)1
R DS (on)2
V GS (off)
Symbol
Symbol
V DSS
V GSS
I DSS
I GSS
Tstg
I DP
Tch
P D
yfs
I D
Ultrahigh-Speed Switching Applications
PW 10 s, duty cycle 1%
Mounted on a ceramic board (250mm
Tc=25 C
I D =--1mA, V GS =0
V DS =- -60V, V GS =0
V GS = 16V, V DS =0
V DS =- -10V, I D =--1mA
V DS =- -10V, I D =--1A
I D =--1A, V GS =- -10V
I D =--1A, V GS =- -4V
2SJ632
Conditions
Package Dimensions
unit : mm
2062A
Conditions
0.4
2
3
(Bottom view)
0.75
0.8mm)
1.5
3.0
4.5
1.6
2
0.5
min
[2SJ632]
P-Channel Silicon MOSFET
1
- -1.2
--60
1.6
32603 TS IM TA-3954
Ratings
typ
1 : Gate
2 : Drain
3 : Source
SANYO : PCP
Ratings
275
400
2.4
--55 to +150
Continued on next page.
1.5
0.4
2SJ632
max
150
- -60
--2.6
1.5
3.5
360
560
20
--2
--8
10
--1
No.7420-1/4
Unit
Unit
m
m
W
W
V
V
A
A
V
V
S
C
C
A
A

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2SJ632 Summary of contents

Page 1

... -60V GSS 16V (off -10V =--1mA yfs -10V =-- (on =--1A -10V R DS (on =--1A -4V SANYO Electric Co.,Ltd. Semiconductor Company P-Channel Silicon MOSFET 2SJ632 [2SJ632] 4.5 1.5 1.6 0.4 0 0.4 1.5 3 Gate (Bottom view Drain 0 ...

Page 2

... See specified Test Circuit =--30V =--10V -2A Qgs V DS =--30V =--10V -2A Qgd V DS =--30V =--10V - =--2A --30V -- = OUT 2SJ632 --3.0V --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 IT05810 Tc= --1A --8 --10 ...

Page 3

... Drain Current -- --30V -- --2A --8 --7 --6 --5 --4 --3 --2 -- Total Gate Charge 2.0 1.5 1.0 0 Ambient Temperature 2SJ632 --10V --1.0 --10 IT05814 t d (on --1.0 IT05816 ...

Page 4

... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2003. Specifications and information herein are subject to change without notice. 2SJ632 PS No.7420-4/4 ...

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