2SJ635 Sanyo Semicon Device, 2SJ635 Datasheet

2SJ635

Manufacturer Part Number

2SJ635

Description

P-Channel Silicon MOSFET General-Purpose Switching Device Applications

Manufacturer

Sanyo Semicon Device

Datasheet

1.2SJ635.pdf (4 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

2SJ635-TL

Manufacturer:

SANYO/三洋

Quantity:

20 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

2SJ635-TL-E

Quantity:

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Ordering number : ENN8277

2SJ635

Features

Specifications

Absolute Maximum Ratings at Ta=25 C

Electrical Characteristics at Ta=25 C

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

•

Low ON-resistance.

Ultrahigh-speed switching.

4V drive.

DC / DC Converter.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

SANYO Electric Co.,Ltd. Semiconductor Company

P-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

V (BR)DSS

R DS (on)1

R DS (on)2

V GS (off)

Symbol

V DSS

V GSS

I GSS

I DSS

Coss

Crss

Ciss

Tstg

I DP

Tch

P D

yfs

I D

PW 10 s, duty cycle 1%

Tc=25 C

I D =--1mA, V GS =0V

V DS =- -60V, V GS =0V

V GS = 16V, V DS =0V

V DS =- -10V, I D =--1mA

V DS =- -10V, I D =- -6A

I D =--6A, V GS =- -10V

I D =--6A, V GS =- -4V

V DS =- -20V, f=1MHz

2SJ635

Conditions

62005PA MS IM TB-00001450

min

--1.2

--60

Ratings

typ

2200

Ratings

235

165

Continued on next page.

--55 to +150

max

150

--2.6

--60

--12

--48

--1

No.8277-1/4

Unit

Related parts for 2SJ635

2SJ635 Summary of contents

Page 1

... SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 2SJ635 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Symbol ...

Page 2

... V DS =--30V -10V =--12A Qgd V DS =--30V -10V =--12A =--12A =0V Package Dimensions unit : mm 7003-004 2.3 0.5 0.85 1.2 1 0.6 0 Gate 2 : Drain 3 : Source 4 : Drain SANYO : -- OUT 2SJ635 S Ratings min typ 18 80 200 125 --0.9 6.5 2.3 5.0 0 Gate 1 ...

Page 3

... Drain Current Time -- --30V --10V 3 2 100 --1.0 --0.1 Drain Current 2SJ635 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 IT09425 Tc= --6 A --8 --10 --12 --14 --16 IT09427 --10 IT09429 t d (on ...

Page 4

... Ambient Temperature Note on usage : Since the 2SJ635 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’ ...

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