2SJ646 Sanyo Semicon Device, 2SJ646 Datasheet

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2SJ646

Manufacturer Part Number
2SJ646
Description
General Purpose Switching Device Applications
Manufacturer
Sanyo Semicon Device
Datasheet

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www.DataSheet4U.com
Ordering number : ENN8282
2SJ646
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
SANYO Electric Co.,Ltd. Semiconductor Company
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
V (BR)DSS
R DS (on)1
R DS (on)2
R DS (on)3
V GS (off)
Symbol
Symbol
V DSS
V GSS
I DSS
I GSS
Coss
Ciss
Crss
Tstg
I DP
Tch
P D
yfs
I D
PW 10 s, duty cycle 1%
Tc=25 C
I D =--1mA, V GS =0V
V DS =- -30V, V GS =0V
V GS = 16V, V DS =0V
V DS =- -10V, I D =--1mA
V DS =- -10V, I D =- -4A
I D =--4A, V GS =- -10V
I D =--2A, V GS =- -4.5V
I D =--2A, V GS =- -4V
V DS =- -10V, f=1MHz
V DS =- -10V, f=1MHz
V DS =- -10V, f=1MHz
2SJ646
Conditions
Conditions
62005PA MS IM TA-100575
min
--1.2
--30
3.3
Ratings
typ
Ratings
510
110
115
5.5
97
78
58
Continued on next page.
--55 to +150
max
150
--2.6
--30
--32
136
154
20
15
--8
10
75
--1
1
No.8282-1/4
Unit
Unit
m
m
m
pF
pF
pF
W
W
V
V
A
A
V
V
S
C
C
A
A

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2SJ646 Summary of contents

Page 1

... SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 2SJ646 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Symbol ...

Page 2

... V DS =--10V -10V =--8A Qgd V DS =--10V -10V =-- =--8A =0V Package Dimensions unit : mm 7003-004 2.3 6.5 0.5 5.0 0.85 1.2 1 0.6 0 Gate 2 : Drain 3 : Source 4 : Drain 2.3 SANYO : --15V -- =3. OUT 2SJ646 S Ratings min typ max 2.4 1.7 --1.0 --1.2 2.3 0 Gate 1 Drain 3 : Source 4 : Drain 2.3 ...

Page 3

... Drain Current --15V --10V 2 100 --0.1 Drain Current 2SJ646 --3. --2.5V --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 IT04492 Ta=25 C --6 --8 --10 --12 --14 --16 IT09667 --10V --0.1 --1.0 --10 IT04496 ...

Page 4

... Amibient Tamperature www.DataSheet4U.com Note on usage : Since the 2SJ646 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’ ...

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