2SJ646

Manufacturer Part Number2SJ646
DescriptionGeneral Purpose Switching Device Applications
ManufacturerSanyo Semicon Device
2SJ646 datasheet
 


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Ordering number : ENN8282
2SJ646
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Specifications
Absolute Maximum Ratings at Ta=25 C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
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Storage Temperature
Electrical Characteristics at Ta=25 C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
2SJ646
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Symbol
Conditions
V DSS
V GSS
I D
I DP
PW 10 s, duty cycle 1%
P D
Tc=25 C
Tch
Tstg
Symbol
Conditions
V (BR)DSS
I D =--1mA, V GS =0V
I DSS
V DS =- -30V, V GS =0V
I GSS
V GS = 16V, V DS =0V
V GS (off)
V DS =- -10V, I D =--1mA
yfs
V DS =- -10V, I D =- -4A
R DS (on)1
I D =--4A, V GS =- -10V
R DS (on)2
I D =--2A, V GS =- -4.5V
R DS (on)3
I D =--2A, V GS =- -4V
Ciss
V DS =- -10V, f=1MHz
Coss
V DS =- -10V, f=1MHz
Crss
V DS =- -10V, f=1MHz
Ratings
Unit
--30
V
20
V
--8
A
--32
A
1
W
15
W
150
C
--55 to +150
C
Ratings
Unit
min
typ
max
--30
V
--1
A
10
A
--1.2
--2.6
V
3.3
5.5
S
58
75
m
97
136
m
110
154
m
510
pF
115
pF
78
pF
Continued on next page.
62005PA MS IM TA-100575
No.8282-1/4

2SJ646 Summary of contents

  • Page 1

    ... SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 2SJ646 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Symbol ...

  • Page 2

    ... V DS =--10V -10V =--8A Qgd V DS =--10V -10V =-- =--8A =0V Package Dimensions unit : mm 7003-004 2.3 6.5 0.5 5.0 0.85 1.2 1 0.6 0 Gate 2 : Drain 3 : Source 4 : Drain 2.3 SANYO : --15V -- =3. OUT 2SJ646 S Ratings min typ max 2.4 1.7 --1.0 --1.2 2.3 0 Gate 1 Drain 3 : Source 4 : Drain 2.3 ...

  • Page 3

    ... Drain Current --15V --10V 2 100 --0.1 Drain Current 2SJ646 --3. --2.5V --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 IT04492 Ta=25 C --6 --8 --10 --12 --14 --16 IT09667 --10V --0.1 --1.0 --10 IT04496 ...

  • Page 4

    ... Amibient Tamperature www.DataSheet4U.com Note on usage : Since the 2SJ646 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’ ...