2SJ653 Sanyo Semicon Device, 2SJ653 Datasheet

2SJ653

Manufacturer Part Number

2SJ653

Description

General-Purpose Switching Device Applications

Manufacturer

Sanyo Semicon Device

Datasheet

1.2SJ653.pdf (4 pages)

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Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

2SJ653

Manufacturer:

PANJIT

Quantity:

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Ordering number : ENN7626

Features

Specifications

Absolute Maximum Ratings at Ta=25 C

Electrical Characteristics at Ta=25 C

Marking : J653

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

•

Low ON-resistance.

Ultrahigh-speed switching.

4V drive.

Motor drive, DC / DC converter.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

SANYO Electric Co.,Ltd. Semiconductor Company

General-Purpose Switching Device Applications

V (BR)DSS

V GS (off)

Symbol

V GSS

V DSS

I DSS

I GSS

Tstg

I DP

P D

Tch

yfs

I D

PW 10 s, duty cycle 1%

Tc=25 C

I D =--1mA, V GS =0

V DS =- -60V, V GS =0

V GS = 16V, V DS =0

V DS =- -10V, I D =--1mA

V DS =- -10V, I D =- -19A

2SJ653

Conditions

Package Dimensions

unit : mm

2063A

Conditions

3.2

2.55

1 2 3

10.0

1.6

2.55

1.2

0.75

2.55

[2SJ653]

min

26.5

- -1.2

P-Channl Silicon MOSFET

--60

72503 TS IM TA-4246

4.5

Ratings

2.8

0.7

typ

Ratings

1 : Gate

2 : Drain

3 : Source

SANYO : TO-220ML

2.4

Continued on next page.

--55 to +150

2SJ653

max

--148

150

--2.6

--60

--37

2.0

--1

No.7626-1/4

Unit

Related parts for 2SJ653

2SJ653 Summary of contents

Page 1

... P D Tc=25 C Tch Tstg Symbol Conditions V (BR)DSS I D =--1mA DSS -60V GSS 16V (off -10V =--1mA yfs -10V -19A P-Channl Silicon MOSFET 2SJ653 [2SJ653] 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0. Gate 2.55 2. Drain 3 : Source 2.55 2.55 SANYO : TO-220ML ...

Page 2

... See specified Test Circuit =--30V -10V =--37A Qgs V DS =--30V -10V =--37A Qgd V DS =--30V -10V -37A =--37A --30V --19A R L =1. OUT 2SJ653 S --70 Tc=25 C --60 --50 --40 --30 --20 --10 0 --3.5 --4.0 --4.5 --5 ...

Page 3

... Drain Current -- --30V --9 ID= --37V --8 --7 --6 --5 --4 --3 --2 -- Total Gate Charge 2SJ653 --19A Tc= -- --7 --8 --9 --10 --50 IT06548 --100 --10 ...

Page 4

... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 2003. Specifications and information herein are subject to change without notice. 2SJ653 ...

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