SFT-0100 Sirenza Microdevices, SFT-0100 Datasheet

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SFT-0100

Manufacturer Part Number
SFT-0100
Description
Transimpedance Amplifier
Manufacturer
Sirenza Microdevices
Datasheet
Product Description
Sirenza Microdevices’ SFT-0100 is a high performance
heterojunction bipolar transistor transimpedance amplifier
designed for 10/12.5 Gb/s SONET/SDH applications. The
SFT-0100 uses high F
technology that delivers high transimpedance, large
dynamic range, and a typical bandwidth greater than
10.5GHz.
Performance is enhanced through the use of a patented
circuit topology that reduces duty cycle distortion under
high photocurrent conditions and allows high transimped-
ance with low DC power to be realized. The SFT-0100 is
supplied in bare die form and includes a current monitor
feature that can be used for fiber alignment or loss of sig-
nal (LOS) detection.
Functional Block Diagram
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions. Sirenza Microdevices assumes no responsibility
for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the
circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems.
303 South Technology Court
Broomfield, CO 80021
Photo-detector
Vpin
*Patented
C
filter
T
indium gallium phosphide device
TIA
Vcc
C
DCDR
Rx
Transimpedance
Amplifier
DCDR*
Copyright 2003 Sirenza Microdevices, Inc. All worldwide rights reserved.
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ext
AMP1
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Phone: (800) SMI-MMIC
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SFT-0100
Transimpedance Amplifier
Product Features
Applications
Optical Receiver Modules
XFP, XENPAK, XPAK, X2 modules
9.953 Gb/s SONET OC-192/SDH STM-64
10.3 Gb/s Ethernet Applications
10.7 Gb/s ITU G.709
12.5 Gb/s SONET with FEC
Low noise InGaP HBT technology
Differential transimpedance ~ 2200 Ω
+5.0V power supply
High sensitivity <
Adjustable dynamic range
Low duty-cycle distortion
Differential Outputs
Photo current monitor
Patented DCDR circuit
Backside vias eliminate the need for ground
wirebonds
Chip Size: 1000um x 1000um x 100um
10pA
Preliminary Data Sheet
Hz
http://www.sirenza.com
EDS-102714 Rev. D

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SFT-0100 Summary of contents

Page 1

... Performance is enhanced through the use of a patented circuit topology that reduces duty cycle distortion under high photocurrent conditions and allows high transimped- ance with low DC power to be realized. The SFT-0100 is supplied in bare die form and includes a current monitor feature that can be used for fiber alignment or loss of sig- nal (LOS) detection ...

Page 2

... Supply Voltage Supply Current Vcc=5.0V Power Dissipation Input Coupling Output Type Output Coupling Photodiode Current Monitor Dynamic Range Adjust See DCDR description 303 South Technology Court Broomfield, CO 80021 SFT-0100 Transimpedance Amplifier Model Used For Transimpedance Calculation Value Unit 60 mA 6 +85 ºC -40 to +150 º ...

Page 3

... Preliminary Data Sheet S22 vs. Frequency Frequency (G Hz) SFT-0100 Optical Sensitivity -20 -19.75 -19.5 -19.25 -19 -18.75 -18.5 -18.25 optical power, (dBm) http://www.sirenza.com EDS-102714 Rev -18 ...

Page 4

... An off chip bypass capacitor is required. Wirebond VCC length is critical and should be minimized. Ground Wirebonds: The SFT-0100 has backside vias and backside metal. The bottom of the die must be electri- cally connected to ground using eutectic or conductive epoxy die attach methods not recommended to attach any wirebonds to the top GND pads ...

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