MA4GC6773 Tyco Electronics, MA4GC6773 Datasheet

MA4GC6773

Manufacturer Part Number

MA4GC6773

Description

GaAs SP2T PIN Diode Switch

Manufacturer

Tyco Electronics

Datasheet

1.MA4GC6773.pdf (3 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MA4GC6773

Manufacturer:

RFMD

Quantity:

5 000

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77 GHz GaAs SP2T

PIN Diode Switch

Features

Description

The MA4CG6773 is a 77 GHz SP2T Switch made from Gallium

Arsenide PIN Diodes, and semi-insulating GaAs Substrate

designed for Automotive Applications. These diodes are fabricated

on OMCVD epitaxial wafers using a process designed for

repeatable electrical characteristics and extremely low parasitics.

These Diodes are fully passivated with Silicon Nitride and have an

additional layer of Polymide for scratch protection. This protective

coating prevents damage to the junction during automated or

manual handling. These devices are suitable for pick and place

insertion.

Each RF Port contains DC blocking Capacitors and a D.C. Bias

Network consisting of High Impedance Lines and RF bypass

capacitors. This device has 100 um square gold plated bonding

pads at all RF and DC ports. RF and DC Ground Backside Gold

Plating allows conventional chip bonding techniques using

80Au/20Sn Solder, Indalloy Solder, or Electrically Conductive

Silver Epoxy.

Outline Drawing

77 Ghz Frequency Response

1.2 dB Insertion Loss

24 dB Isolation

2nS Switching Speed

Silicon Nitride Passivation

Polyimide Scratch Protection

Designed for Automated Pick and Place Insertion

Qualified for Automotive Environments

Absolute Maximum Ratings

1. Exceeding any of these values may result in permanent

Applications

This highly reliable, very low parasitic SP2T is useable through

higher millimeter frequencies for exceptional loss to isolation

ratio and 2nS switching speed performance. Typical Applications

include Transceivers, Automotive Cruise Control Systems, and

Radiometry Switch Functions.

damage

Operating Temperature

Storage Temperature

D.C. Bias Current

D. C. Reverse Bias Voltage

RF C.W. Incident Power

Mounting Temperature

Parameter

Dim. Are in m

+300 °C for 10 seconds

-15 Volts @ -10 A

+15 mA per Diode

-65 °C to +150 °C

-25 °C to +85 °C

+ 23 dBm C.W.

Value

V 2.00

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MA4GC6773 Summary of contents

Page 1

GHz GaAs SP2T www.DataSheet4U.com PIN Diode Switch Features n 77 Ghz Frequency Response n 1.2 dB Insertion Loss Isolation 2nS Switching Speed n n Silicon Nitride Passivation n Polyimide Scratch Protection n Designed for Automated Pick ...

Page 2

... Conditions Insertion Loss Isolation VSWR Switching Speed 10% - 90% RF Voltage DC to Millimeter Wave State Truth Table for the MA4GC6773 DC Bias Conditions B2 -5 Volts +10 mA M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. ...

Page 3

... M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. MA4GC6773 Solder Die Attach All die attach and bonding methods should be compatible with gold metal. Solder which does not scavenge gold, such as 80 Au/ Indalloy #2 is recommended ...

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