FLL300IL-1

Manufacturer Part NumberFLL300IL-1
Description(FLL300IL-1/-2/-3) L-band Medium & High Power GAAS Fets
ManufacturerFujitsu Microelectronics
FLL300IL-1 datasheet
 


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FLL300IL-1, FLL300IL-2, FLL300IL-3
www.DataSheet4U.com
FEATURES
• High Output Power: P 1dB = 44.5dBm (Typ.)
• High Gain: G 1dB = 12.0dB (Typ.)@1.8GHz (FLL300IL-2)
• High PAE: η add = 44% (Typ.)
• Proven Reliability
• Hermetically Sealed Package
DESCRIPTION
The FLL300IL-1, FLL300IL-2, FLL300IL-3 are Power GaAs FETs that are
specifically designed to provide high power at L-Band frequencies with
gain, linearity and efficiency superior to that of silicon devices. The
performance in multitone environments for Class AB operation make
them ideally suited for base station applications.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (V DS ) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 80.4 and -17.4 mA respectively with
gate resistance of 25Ω.
3. The operating channel temperature (T ch ) should not exceed 145°C.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
FLL300IL-1
Output Power
FLL300IL-2
at 1dB G.C.P.
FLL300IL-3
FLL300IL-1
Power Gain
FLL300IL-2
at 1dB G.C.P.
FLL300IL-3
Drain Current
Power added Efficiency
Thermal Resistance
www.DataSheet4U.com
Channel Temperature Rise
CASE STYLE: IL
* Under fixed VGS bias condition
Edition 1.2
July 1999
L-Band Medium & High Power GaAs FET
Symbol
Condition
V DS
V GS
T c = 25°C
P T
T stg
T ch
Symbol
Test Conditions*
V DS = 5V, V GS = 0V
I DSS
g m
V DS = 5V, I DS = 7200mA
V p
V DS = 5V, I DS = 720mA
V GSO
I GS = -720µA
f=900MHz
f=1.8GHz
P 1dB
V DS = 10V
f=2.6GHz
I DS = 0.5 I DSS
f=900MHz
(Typ.)
f=1.8GHz
G 1dB
f=2.6GHz
I dsr
V DS = 10V
I DS = 0.5 I DSS (Typ.)
η add
R th
Channel to Case
(10V x I ds r - P out + P in) x R th
∆T ch
1
Unit
Rating
15
V
-5
V
100
W
-65 to +175
°C
175
°C
Limit
Unit
Min.
Max.
Typ.
-
12
16
A
-
6000
-
mS
-1.0
-2.0
-3.5
V
-
-
-5
V
43.0
44.5
-
dBm
-
11.0
13.0
dB
-
10.0
12.0
dB
-
8.0
10.0
dB
-
6.0
8.0
A
-
-
44
%
-
1.1
1.5
°C/W
-
-
80
°C
G.C.P.: Gain Compression Point

FLL300IL-1 Summary of contents

  • Page 1

    ... Proven Reliability • Hermetically Sealed Package DESCRIPTION The FLL300IL-1, FLL300IL-2, FLL300IL-3 are Power GaAs FETs that are specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices. The performance in multitone environments for Class AB operation make them ideally suited for base station applications. Fujitsu’ ...

  • Page 2

    ... FLL300IL-1, FLL300IL-2, FLL300IL-3 www.DataSheet4U.com L-Band Medium & High Power GaAs FET DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE www.DataSheet4U.com POWER DERATING CURVE 120 100 100 150 Case Temperature (° =0V 9 -0. Drain-Source Voltage (V) 2 200 -1.0V -1.5V -2.0V 10 ...

  • Page 3

    ... OUTPUT POWER vs. INPUT POWER V DS =10V I DS ≈ 0.5 I DSS f = 0.9 GHz out η add Input Power (dBm) 3 FLL300IL-1 +90° 0.5GHz 1.0 1.3 1.5GHz 1 0.5GHz 1.5GHz SCALE FOR | .01 .02 -90° S12 S22 MAG ANG MAG ANG ...

  • Page 4

    ... FLL300IL-2 www.DataSheet4U.com L-Band Medium & High Power GaAs FET +j25 2.6 2.2 2.4 2.0 1.8 2.4 1.4 +j10 1.6 2.2 1.8 1.2 1.6 1.2 2 3.0 -j10 3.0 -j25 FREQUENCY (MHZ) MAG 1000 .953 1100 .944 1200 .933 1300 .923 1400 .903 1500 .864 1600 .788 1700 .654 1800 .506 1900 .522 2000 .652 2100 .716 2200 ...

  • Page 5

    ... OUTPUT POWER vs. INPUT POWER V DS =10V I DS ≈ 0.5 I DSS f = 2.6 GHz out η add Input Power (dBm) 5 FLL300IL-3 +90° .04 2.5 .03 3.0 .02 .01 2.5 1 3.0 SCALE FOR | 1.5 3.5 3.5 2.0 2.0 -90° S12 S22 MAG ANG ...

  • Page 6

    ... FLL300IL-1, FLL300IL-2, FLL300IL-3 www.DataSheet4U.com L-Band Medium & High Power GaAs FET 4 4-R 1.3±0.15 (0.051) For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House ...