FLL300IL-1 Fujitsu Microelectronics, FLL300IL-1 Datasheet
FLL300IL-1
Related parts for FLL300IL-1
FLL300IL-1 Summary of contents
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... Proven Reliability • Hermetically Sealed Package DESCRIPTION The FLL300IL-1, FLL300IL-2, FLL300IL-3 are Power GaAs FETs that are specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices. The performance in multitone environments for Class AB operation make them ideally suited for base station applications. Fujitsu’ ...
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... FLL300IL-1, FLL300IL-2, FLL300IL-3 www.DataSheet4U.com L-Band Medium & High Power GaAs FET DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE www.DataSheet4U.com POWER DERATING CURVE 120 100 100 150 Case Temperature (° =0V 9 -0. Drain-Source Voltage (V) 2 200 -1.0V -1.5V -2.0V 10 ...
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... OUTPUT POWER vs. INPUT POWER V DS =10V I DS ≈ 0.5 I DSS f = 0.9 GHz out η add Input Power (dBm) 3 FLL300IL-1 +90° 0.5GHz 1.0 1.3 1.5GHz 1 0.5GHz 1.5GHz SCALE FOR | .01 .02 -90° S12 S22 MAG ANG MAG ANG ...
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... FLL300IL-2 www.DataSheet4U.com L-Band Medium & High Power GaAs FET +j25 2.6 2.2 2.4 2.0 1.8 2.4 1.4 +j10 1.6 2.2 1.8 1.2 1.6 1.2 2 3.0 -j10 3.0 -j25 FREQUENCY (MHZ) MAG 1000 .953 1100 .944 1200 .933 1300 .923 1400 .903 1500 .864 1600 .788 1700 .654 1800 .506 1900 .522 2000 .652 2100 .716 2200 ...
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... OUTPUT POWER vs. INPUT POWER V DS =10V I DS ≈ 0.5 I DSS f = 2.6 GHz out η add Input Power (dBm) 5 FLL300IL-3 +90° .04 2.5 .03 3.0 .02 .01 2.5 1 3.0 SCALE FOR | 1.5 3.5 3.5 2.0 2.0 -90° S12 S22 MAG ANG ...
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... FLL300IL-1, FLL300IL-2, FLL300IL-3 www.DataSheet4U.com L-Band Medium & High Power GaAs FET 4 4-R 1.3±0.15 (0.051) For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House ...