FLL300IL-1 Fujitsu Microelectronics, FLL300IL-1 Datasheet - Page 6

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FLL300IL-1

Manufacturer Part Number
FLL300IL-1
Description
(FLL300IL-1/-2/-3) L-band Medium & High Power GAAS Fets
Manufacturer
Fujitsu Microelectronics
Datasheet
www.DataSheet4U.com
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU MICROELECTRONICS, LTD.
Compound Semiconductor Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0598M200
FLL300IL-1, FLL300IL-2, FLL300IL-3
L-Band Medium & High Power GaAs FET
www.DataSheet4U.com
4-R 1.3±0.15
(0.051)
4
Metal-Ceramic Hermetic Package
20.4±0.2
(0.646)
(0.803)
24±0.2
(0.945)
16.4
1
3
(0.039)
1.0
Case Style "IL"
2
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
• Do not put these products into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
• Observe government laws and company regulations when discarding this
6
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
Unit: mm(inches)
1. Gate
2. Source (Flange)
3. Drain
4. Source (Flange)
(0.004)
0.1
2.4±0.15
5.5 Max.
(0.094)
(0.217)
CAUTION

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