FLL400IK-2C Eudyna Devices, FLL400IK-2C Datasheet
FLL400IK-2C
Related parts for FLL400IK-2C
FLL400IK-2C Summary of contents
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... High PAE: add=45%(Typ.) ・ Broad Band: 2.11~2.17GHz ・ Hermetically Sealed Package DESCRIPTION The FLL400IK- Watt GaAs FET that is specially suited for use in W-CDMA base station amplifier as long term reliability. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ...
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... FLL400IK-2C High Voltage - High Power GaAs FET ■ Package Out Line PIN ASSIGMENT 1 : GATE 2 : SOURCE(Flange DRAIN Unit:mm 2 www.DataSheet4U.com ...
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... Tel +81-55-275-4411 Fax +81-55-275-9461 Sales Division 1,Kanai-cho,Sakae-ku,Yokohama,244-0845,Japan Tel +81-45-853-8156 Fax +81-45-853-8170 FLL400IK-2C High Voltage - High Power GaAs FET CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: ・ ...