FLL400IK-2C Eudyna Devices, FLL400IK-2C Datasheet

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FLL400IK-2C

Manufacturer Part Number
FLL400IK-2C
Description
High Voltage - High Power GaAs FET
Manufacturer
Eudyna Devices
Datasheet
Edition 1.2
September 2004
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
DC Input Voltage
Forward Gate Current
Reverse Gate Current
Operating channel temperature
Pinch-off Voltage
Gate-Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Drain Current
Power-added Efficiency
Thermal Resistance
ABSOLUTE MAXIMUM RATING (Case Temperature Tc=25
Item
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25
Item
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25
FEATURES
・ High Output Power: P1dB=46.0dBm(Typ.)
・ High Gain: G1dB=13.0dB(Typ.)
・ High PAE: add=45%(Typ.)
・ Broad Band: 2.11~2.17GHz
・ Hermetically Sealed Package
DESCRIPTION
The FLL400IK-2C is a 40 Watt GaAs FET that is specially suited
for use in W-CDMA base station amplifier as long term reliability.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5k )
ESD
Item
Class III
Symbol
Symbol
Symbol
VGSO
G1dB
P1dB
PTot
VDS
T
IGR
Tch
Idsr
V
V
IGF
Rth
T
Vp
add
2000 V~
DS
GS
stg
ch
1
VDS=5V,IDS=110mA
IGS=-1.1mA
IDS(DC)=1.5A
Pin=35dBm
V
f=2.17GHz
DD
=12V
Condition
Condition
RG=5
RG=5
High Voltage - High Power GaAs FET
-65 to +175
Rating
100
175
15
-5
o
Min. Typ. Max.
45.0
12.0
-0.1
-5.0
C)
-
-
-
o
C)
Limit
Limit
CASE STYLE: IK
>-25
46.0
13.0
45.0
<85
145
-0.3
6.7
1.3
12
-
FLL400IK-2C
o
C)
-0.5
8.7
1.5
-
-
-
-
www.DataSheet4U.com
Unit
Unit
Unit
dBm
o
mA
mA
C/W
dB
o
o
o
W
V
V
%
V
V
V
A
C
C
C

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FLL400IK-2C Summary of contents

Page 1

... High PAE: add=45%(Typ.) ・ Broad Band: 2.11~2.17GHz ・ Hermetically Sealed Package DESCRIPTION The FLL400IK- Watt GaAs FET that is specially suited for use in W-CDMA base station amplifier as long term reliability. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ...

Page 2

... FLL400IK-2C High Voltage - High Power GaAs FET ■ Package Out Line PIN ASSIGMENT 1 : GATE 2 : SOURCE(Flange DRAIN Unit:mm 2 www.DataSheet4U.com ...

Page 3

... Tel +81-55-275-4411 Fax +81-55-275-9461 Sales Division 1,Kanai-cho,Sakae-ku,Yokohama,244-0845,Japan Tel +81-45-853-8156 Fax +81-45-853-8170 FLL400IK-2C High Voltage - High Power GaAs FET CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: ・ ...

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