FLL410IK-3C Eudyna Devices, FLL410IK-3C Datasheet

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FLL410IK-3C

Manufacturer Part Number
FLL410IK-3C
Description
L-Band High Power GaAs FET
Manufacturer
Eudyna Devices
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FLL410IK-3C
Manufacturer:
SUMITOMO
Quantity:
1 165
Edition 1.1
Oct 2003
FEATURES
・High Output Power: Pout=46.0dBm(Typ.)
・High Gain: GL=13.0dB(Typ.)
・High PAE: ηadd=52%(Typ.)
・Broad Band: 2.5~2.7GHz
・Hermetically Sealed Package
DESCRIPTION
The FLL410IK-3C is a partially matched 40 Watt GaAs FET that is
designed for use in 2.5 – 2.7 GHz band amplifiers. This new product
is uniquely suited for use in MMDS applications as it offers excellent
linearity, high efficiency, high gain, long term reliability and ease of use.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25
RECOMMENNDED OPERATING CONDITION(Case Temperature Tc=25
Gate-Source Breakdown Voltage
Drain Current
Operating Channel Temperature
Pinch-off Voltage
*1:GL is measured at Pin=22.0dBm
Output Power
Power-added Efficiency
Drain Current
Linear Gain *1
Thermal Resistance
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25
Gate-Source Voltage
Drain-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Gate Current
Gate Current
DC Input Voltage
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5k
ESD
Item
Item
Item
Class Ⅲ
Symbol
V
I
V
P
G
η
DSS
I
GSO
R
dsr
add
p
OUT
L
Symbol
th
V
Tch
I
I
GR
GF
DS
2000V ~
Symbol
V
T
T
V
PT
stg
ch
DS
GS
V
V
I
V
f=2.6 GHz
I
Pin=35.0dBm
GS
DS
Channel to Case
DS
DS
1
DS
Test Conditions
=-1.1mA
=3A
=5V, V
=5V, I
=12V
Condition
DS
GS
)
R
R
=110mA
G
G
=0V
=5
=5
L-Band High Power GaAs FET
-65 to +175
o
-0.1
45.0
12.0
C)
Min.
-5.0
Rating
-
-
-
-
100
175
o
15
-5
C)
FLL410IK-3C
Limit
46.0
13.0
Typ.
-0.3
Limit
4.0
5.9
≥-25
1.3
≤12
≤145
≤88
52
-
o
C)
CASE STYLE: IK
-0.5
www.DataSheet4U.com
Max.
7.6
1.5
-
-
-
-
-
o
Unit
dBm
C/W
Unit
dB
mA
mA
A
V
V
Unit
o
%
o
A
o
V
C
W
V
V
C
C

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