G4BC20F International Rectifier, G4BC20F Datasheet

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G4BC20F

Manufacturer Part Number
G4BC20F
Description
Search -----> IRG4BC20F
Manufacturer
International Rectifier
Datasheet

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Part Number:
G4BC20FD
Manufacturer:
ST
0
www.DataSheet4U.com
Benefits
Absolute Maximum Ratings
Thermal Resistance
www.irf.com
Features
Features
Features
Features
Features
• Fast: Optimized for medium operating
• Generation 4 IGBT design provides tighter
• Industry standard TO-220AB package
• Generation 4 IGBTs offer highest efficiency available
• IGBTs optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
R
R
R
Wt
V
I
I
I
I
V
E
P
P
T
T
C
C
CM
LM
Generation 3
kHz in resonant mode).
parameter distribution and higher efficiency than
J
STG
CES
GE
ARV
D
D
θJC
θCS
θJA
frequencies ( 1-5 kHz in hard switching, >20
industry-standard Generation 3 IR IGBTs
@ T
@ T
@ T
@ T
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Parameter
Parameter
G
n-channel
300 (0.063 in. (1.6mm) from case )
2.0 (0.07)
Typ.
–––
–––
0.5
C
E
10 lbf•in (1.1N•m)
-55 to + 150
TO-220AB
Max.
± 20
600
9.0
5.0
16
64
60
24
64
@V
V
CE(on) typ.
Max.
V
GE
–––
–––
2.1
80
CES
= 15V, I
= 600V
= 1.66V
C
4/17/2000
= 9.0A
Units
Units
°C/W
g (oz)
mJ
W
°C
V
A
V
1

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G4BC20F Summary of contents

Page 1

Features Features Features Features Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • ...

Page 2

... IRG4BC20F Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Emitter-to-Collector Breakdown Voltage T V (BR)ECS ∆V Temperature Coeff. of Breakdown Voltage /∆T (BR)CES J V Collector-to-Emitter Saturation Voltage CE(ON) V Gate Threshold Voltage GE(th) ∆V /∆T Temperature Coeff. of Threshold Voltage GE(th) J Forward Transconductance Zero Gate Voltage Collector Current ...

Page 3

... RMS 150 15V GE 20µs PULSE WIDTH 10 IRG4BC20F ria uty c yc le: 50 125° 90° ate drive as spec ifie tio lta ...

Page 4

... IRG4BC20F Case Temperature ( C Fig Maximum Collector Current vs. Case Temperature 10 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 0.01 0.00001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 75 100 125 150 ° C) Fig Typical Collector-to-Emitter Voltage  SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 t , Rectangular Pulse Duration (sec ...

Page 5

... SHORTED ies  C oes  C res 10 100 Ω IRG4BC20F  400V 9. Total Gate Charge (nC) G Fig Typical Gate Charge vs. Gate-to-Emitter Voltage  10 Ω 50Ohm 15V ...

Page 6

... IRG4BC20F  3.0 Ω 50Ohm 150 C ° 480V CC 2 15V GE 2.0 1.5 1.0 0.5 0 Collector-to-emitter Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current 100 V = 20V 125 SAFE OPERATING AREA 100 V , Collector-to-Emitter Voltage (V) CE Fig Turn-Off SOA www ...

Page 7

... IRG4BC20F 480V 480µF 960V Fig. 13b - Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss D .U .T. Test Circuit * Driver same type as D.U.T 480V S Fig. 14b - Switching Loss Waveforms t=5µ ...

Page 8

... IRG4BC20F (. 2 2 WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel (0)20 8645 8000 IR JAPAN: K& ...

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