G4BC30KD International Rectifier, G4BC30KD Datasheet
G4BC30KD
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G4BC30KD Summary of contents
Page 1
... Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6- Screw. Parameter Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight PD -91595A IRG4BC30KD Short Circuit Rated UltraFast IGBT 600V CES V 2.21V CE(on) typ. ...
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... IRG4BC30KD Electrical Characteristics @ T V Collector-to-Emitter Breakdown VoltageS (BR)CES Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage GE(th) J Forward Transconductance Zero Gate Voltage Collector Current CES V Diode Forward Voltage Drop ...
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... Fig Typical Load Current vs. Frequency (Load Current = I of fundamental) RMS 150 15V GE 20µs PULSE WIDTH 10 IRG4BC30KD For both: D uty cy cle: 50 125° 90°C s ink G ate drive as specified Dis sip ation = W 10 100 150 C J ...
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... IRG4BC30KD Case Temperature ( C Fig Maximum Collector Current vs. Case 0.50 0.20 0.10 0.1 0.05 0.02 0.01 0.01 0.00001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.DataSheet.in 75 100 125 150 ° C) Fig Typical Collector-to-Emitter Voltage Temperature SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 t , Rectangular Pulse Duration (sec ...
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... oes ies C oes C res 10 100 , Collector-to-Emitter Voltage ( Gate Resistance ( , Gate Resistance (Ohm) Resistance IRG4BC30KD 400V 16A Total Gate Charge (nC) G Fig Typical Gate Charge vs. Gate-to-Emitter Voltage 10 R ...
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... IRG4BC30KD 5 Ohm 150 480V 15V 4.0 GE 3.0 2.0 1.0 0 Collector-to-emitter Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current Fig Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 www.DataSheet.in ° 0° 5°C ...
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... Fig Typical Recovery Current vs /µs) f /dt f IRG4BC30KD ° ° . / /µ ...
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... IRG4BC30KD 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining E 8 www.DataSheet.in Same ty pe device .U.T. 430µ . ...
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... D.U. 480V IRG4BC30KD 480V @25° ...
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... IRG4BC30KD Q Repetitive rating: V (figure 20 =80%(V CC CES S Pulse width 80µs; duty factor 0.1%. T Pulse width 5.0µs, single shot (. (. (. (. (. (. (. (. ...