G4BC30UD International Rectifier, G4BC30UD Datasheet
G4BC30UD
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G4BC30UD Summary of contents
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... Thermal Resistance Parameter R Junction-to-Case - IGBT θJC R Junction-to-Case - Diode θJC R Case-to-Sink, flat, greased surface θCS R Junction-to-Ambient, typical socket mount θJA Wt Weight www.irf.com IRG4BC30UD G TM ultrafast, n-cha nn el 300 (0.063 in. (1.6mm) from case) Min. ------ ------ ------ ----- ------ PD 91453B UltraFast CoPack IGBT 600V CES = 1 ...
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... IRG4BC30UD Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown VoltageS 600 (BR)CES ∆V Temperature Coeff. of Breakdown Voltage ---- /∆T (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th) ∆V /∆T Temperature Coeff. of Threshold Voltage ---- GE(th) J Forward Transconductance Zero Gate Voltage Collector Current CES ...
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... 0 Fig Typical Transfer Characteristics IRG4BC30UD D uty 5° ° rive ified T urn -o n losse s in clud e effects of re verse re co very Pow sipatio ° ...
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... IRG4BC30UD (° Fig Maximum Collector Current vs. Case Temperature 0.5 0 0. ...
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... Fig Typical Gate Charge vs 0.1 -60 - Fig Typical Switching Losses vs. IRG4BC30UD = Gate-to-Emitter Voltage = 23Ω = 15V = 480V I = 24A 12A ...
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... IRG4BC30UD 2 Ω 150° 480V 15V 1 1.2 0.8 0.4 0 Collector-to-Emitter Current ( Fig Typical Switching Losses vs. Collector-to-Emitter Current Fig Maximum Forward Voltage Drop vs. Instantaneous Forward Current ...
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... 6 /µ Fig Typical Stored Charge vs. di www.irf.com IRG4BC30UD ° ° . / /µ ...
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... IRG4BC30UD Same ty pe device as D .U.T. 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode d(on ...
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... www.irf.com D.U. 480V IRG4BC30UD 480V @25° ...
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... IRG4BC30UD Q Repetitive rating: V =20V; pulse width limited by maximum junction temperature GE (figure 20 =80%( =20V, L=10µ CES GE S Pulse width ≤ 80µs; duty factor ≤ 0.1%. T Pulse width 5.0µs, single shot (. (. (. (. ...